PD20010 stock, PD20010, PD20010-E


PartNumber	PD20010-E	PD20010S-E	PD20010STR-E
Description	RF MOSFET Transistors POWER R.F.	RF MOSFET Transistors POWER R.F.	RF MOSFET Transistors RF power tran LdmoST N-chann
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Category	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
RoHS	Y	Y	Y
Transistor Polarity	N-Channel	N-Channel	N-Channel
Technology	Si	Si	Si
Id Continuous Drain Current	5 A	5 A	5 A
Vds Drain Source Breakdown Voltage	40 V	40 V	40 V
Gain	11 dB	11 dB	11 dB
Output Power	10 W	10 W	10 W
Minimum Operating Temperature	- 65 C	- 65 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	PowerSO-10RF-Formed-4	PowerSO-10RF-Straight-4	PowerSO-10RF-Straight-4
Packaging	Tube	Tube	Reel
Configuration	Single	Single	Single
Height	3.5 mm	3.5 mm	-
Length	7.5 mm	7.5 mm	-
Operating Frequency	2 GHz	2 GHz	2 GHz
Series	PD20010-E	PD20010-E	PD20010-E
Type	RF Power MOSFET	RF Power MOSFET	RF Power MOSFET
Width	9.4 mm	9.4 mm	-
Brand	STMicroelectronics	STMicroelectronics	STMicroelectronics
Channel Mode	Enhancement	Enhancement	-
Moisture Sensitive	Yes	Yes	Yes
Pd Power Dissipation	59 W	59 W	59 W
Product Type	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
Factory Pack Quantity	400	400	600
Subcategory	MOSFETs	MOSFETs	MOSFETs
Vgs Gate Source Voltage	15 V	15 V	15 V
Unit Weight	0.105822 oz	0.105822 oz	0.105822 oz

Search Part Number : "PD20010", Match & Start with "PD20010" - Total : 8

製造商	型號	描述
STMicroelectronics	PD20010-E	RF MOSFET Transistors POWER R.F.
	PD20010TR-E	RF MOSFET Transistors RF power tran LdmoST N-chann
	PD20010S-E	RF MOSFET Transistors POWER R.F.
	PD20010STR-E	RF MOSFET Transistors RF power tran LdmoST N-chann
	PD20010TR-E	RF MOSFET Transistors RF power tran LdmoST N-chann
	PD20010STR-E	RF MOSFET Transistors RF power tran LdmoST N-chann
	PD20010S-E	RF MOSFET Transistors POWER R.F.
	PD20010-E	TRANS RF N-CH FET POWERSO-10RF

PD20010