 | | | |
| PartNumber | PHB2006 | PHB20N06LT | PHB20N06T |
| Description | |||
| Manufacturer | IR | - | PHNXP |
| Product Category | Module | - | FETs - Single |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PHB20N06T,118 | MOSFET RAIL MOSFET | |
| PHB20NQ20T,118 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
| PHB20N06T,118 | RF Bipolar Transistors MOSFET RAIL MOSFET | ||
| PHB20NQ20T118 | Now Nexperia PHB20NQ20T Power Field-Effect Transistor, 20A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
| PHB2006 | 全新原裝 | ||
| PHB20N06LT | 全新原裝 | ||
| PHB20N06T | 全新原裝 | ||
| PHB20N06T118 | Now Nexperia PHB20N06T - Power Field-Effect Transistor, 20.3A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
| PHB20NQ20 | 全新原裝 | ||
| PHB20NQ20T | 全新原裝 | ||
| PHB20NQ20T+118 | Now Nexperia PHB20NQ20T Power Field-Effect Transistor, 20A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK |