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| PartNumber | R6030ENX | R6030ENXC7 | R6030ENZ1 |
| Description | MOSFET 10V Drive Nch MOSFET | ||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 115 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 85 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 86 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 15.4 mm | - | - |
| Length | 10.3 mm | - | - |
| Series | Super Junction-MOS EN | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.8 mm | - | - |
| Brand | ROHM Semiconductor | - | - |
| Fall Time | 60 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 55 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 190 ns | - | - |
| Typical Turn On Delay Time | 40 ns | - | - |
| Part # Aliases | R6030ENX | - | - |
| Unit Weight | 0.090478 oz | - | - |