RDN0

RDN050N20FU6 vs RDN050N20 vs RDN080

 
PartNumberRDN050N20FU6RDN050N20RDN080
DescriptionMOSFET PWR MOSFET TR DRIVE VLT-10V
ManufacturerROHM Semiconductor--
Product CategoryTransistors - FETs, MOSFETs - Single--
PackagingBulk--
Unit Weight0.211644 oz--
Mounting StyleThrough Hole--
Package CaseTO-220-3--
TechnologySi--
Number of Channels1 Channel--
Transistor Type1 N-Channel--
Pd Power Dissipation30 W--
Vgs Gate Source Voltage10 V--
Id Continuous Drain Current5 A--
Vds Drain Source Breakdown Voltage200 V--
Vgs th Gate Source Threshold Voltage4 V--
Rds On Drain Source Resistance720 mOhms--
Transistor PolarityN-Channel--
Qg Gate Charge9.3 nC--
製造商 型號 描述 RFQ
ROHM Semiconductor
ROHM Semiconductor
RDN080N25FU6 MOSFET POWER MOSFET TR; TO-220FN; DRIVE VOLTAGE - 4V
RDN050N20FU6 MOSFET PWR MOSFET TR DRIVE VLT-10V
RDN050N20 全新原裝
RDN080 全新原裝
RDN080N25 全新原裝
RDN080N25FU6 MOSFET N-CH 250V 8A TO220FN
RDN080N25FV6 全新原裝
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