SH8M3

SH8M31GZETB vs SH8M3 vs SH8M32GAETCEBAA01

 
PartNumberSH8M31GZETBSH8M3SH8M32GAETCEBAA01
DescriptionMOSFET 60V NCH+PCH POWER
ManufacturerROHM Semiconductor-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance65 mOhms, 70 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7 nC, 40 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel, 1 P-Channel--
BrandROHM Semiconductor--
Fall Time13 ns, 40 ns--
Product TypeMOSFET--
Rise Time18 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns, 100 ns--
Typical Turn On Delay Time12 ns, 17 ns--
製造商 型號 描述 RFQ
SH8M31GZETB MOSFET 60V NCH+PCH POWER
SH8M3TB1 MOSFET Nch+Pch 30V/-30V 5A/-4.5A; MOSFET
SH8M3 全新原裝
SH8M32GAETCEBAA01 全新原裝
SH8M3TB 全新原裝
SH8M3TB1 MOSFET Nch+Pch 30V/-30V 5A/-4.5A; MOSFET
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