 | | | |
| PartNumber | SIHFL9110TR-GE3 | SIHFL110TR-GE3 | SIHFL9014TR-GE3 |
| Description | MOSFET 100V Vds 20V Vgs SOT-223 | MOSFET 100V Vds 20V Vgs SOT-223 | MOSFET -60V Vds 20V Vgs SOT-223 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-3 | SOT-223-3 | SOT-223-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 60 V |
| Id Continuous Drain Current | 1.1 A | 1.5 A | 1.8 A |
| Rds On Drain Source Resistance | 1.2 Ohms | 540 mOhms | 500 mOhms |
| Vgs th Gate Source Threshold Voltage | - 4 V | 2 V | - 4 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 8.7 nC | 8.3 nC | 12 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 3.1 W | 3.1 W | 3.1 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Series | SIH | - | SIH |
| Transistor Type | 1 P-Channel | 1 N-Channel | 1 P-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 0.82 S | 1.1 S | 1.3 S |
| Fall Time | 17 ns | 9.4 ns | 31 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 27 ns | 16 ns | 63 ns |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns | 15 ns | 9.6 ns |
| Typical Turn On Delay Time | 10 ns | 6.9 ns | 11 ns |
| Unit Weight | 0.009171 oz | - | - |
| Height | - | 1.8 mm | - |
| Length | - | 6.5 mm | - |
| Width | - | 3.5 mm | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHFR220-GE3 | MOSFET 200V Vds 20V Vgs DPAK (TO-252) | |
| SIHFR320-GE3 | MOSFET 400V Vds 20V Vgs DPAK (TO-252) | ||
| SIHFR420TRL-GE3 | MOSFET 500V Vds 20V Vgs DPAK (TO-252) | ||
| SIHFL9110TR-GE3 | MOSFET 100V Vds 20V Vgs SOT-223 | ||
| SIHFL9014TR-GE3 | MOSFET -60V Vds 20V Vgs SOT-223 | ||
| SIHFR420A-GE3 | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | ||
| SIHFR1N60ATR-GE3 | MOSFET 600V Vds 30V Vgs DPAK (TO-252) | ||
| SIHFR430ATR-GE3 | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | ||
| SIHFR1N60A-GE3 | MOSFET 600V Vds TO-252 DPAK | ||
| SIHFL110TR-GE3 | HANNEL 100V | ||
| SIHFL9014TR-GE3 | Trans MOSFET P-CH 60V 1.8A 4-Pin(3+Tab) SOT-223 T/R | ||
| SIHFL9110TR-GE3 | Trans MOSFET P-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R | ||
| SIHFL210 | 全新原裝 | ||
| SIHFL210TR | 全新原裝 | ||
| SIHFL210TR-GE3 | MOSFET MOSFET N-CHANNEL 200V | ||
| SIHFL214TR-GE3 | MOSFET MOSFET N-CHANNEL 250V | ||
| SIHFL9014 | 全新原裝 | ||
| SIHFL9110 | 全新原裝 | ||
| SIHFL9110-E3 | 全新原裝 | ||
| SIHFP150-E3 | 全新原裝 | ||
| SIHFP27N60K-E3 | 全新原裝 | ||
| SIHFP448 | 全新原裝 | ||
| SIHFPG50-E3 | 全新原裝 | ||
| SIHFPS37N50A | 全新原裝 | ||
| SIHFR010TL-E3 | 全新原裝 | ||
| SIHFR014-E3 | 全新原裝 | ||
| SIHFR014NT-E3 | 全新原裝 | ||
| SIHFR014TL-GE3 | 全新原裝 | ||
| SIHFR014TR-GE3 | Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R (Alt: SIHFR014TR-GE3) | ||
| SIHFR020 | 全新原裝 | ||
| SIHFR020-E3 | 全新原裝 | ||
| SIHFR020TL-E3 | 全新原裝 | ||
| SIHFR024TR-GE3 | 全新原裝 | ||
| SIHFR110 | 全新原裝 | ||
| SIHFR110TL | 全新原裝 | ||
| SIHFR110TL-E3 | 全新原裝 | ||
| SIHFR1N60A | 全新原裝 | ||
| SIHFR1N60AGE3 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | ||
| SIHFR210 | 全新原裝 | ||
| SIHFR220 | 全新原裝 | ||
| SIHFR224 | 全新原裝 | ||
| SIHFR310TR | 全新原裝 | ||
| SIHFR310TRR-GE3 | Trans MOSFET N-CH 400V 1.7A 3-Pin TO-252 T/R (Alt: SIHFR310TRR-GE3) | ||
| SIHFR320-E3 | 全新原裝 | ||
| SIHFR320GE3 | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| SIHFL210T-E3 | 全新原裝 | ||
| SIHFR014 | 全新原裝 | ||
| SIHFR024 | 全新原裝 | ||
Vishay |
SIHFR1N60A-GE3 | MOSFET N-CH 600V 1.4A TO252AA | |
| SIHFR1N60ATR-GE3 | MOSFET N-CH 600V 1.4A TO252AA |