Vishay / Siliconix |
SIHD240N60E-GE3 |
MOSFET 600V Vds; +/-30V Vgs DPAK (TO-252) |
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SIHD1K4N60E-GE3 |
MOSFET 600V Vds 30V Vgs DPAK (TO-252) |
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SIHB35N60EF-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
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SIHD14N60E-GE3 |
MOSFET 600V Vds 30V Vgs DPAK (TO-252) |
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SIHD2N80E-GE3 |
MOSFET 800V Vds 30V Vgs DPAK (TO-252) |
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SIHB4N80E-GE3 |
MOSFET 800V Vds 30V Vgs D2PAK (TO-263) |
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SIHD12N50E-GE3 |
MOSFET 500V Vds 30V Vgs DPAK (TO-252) |
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SIHB33N60EF-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
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SIHB33N60ET1-GE3 |
MOSFET N-Channel 600V |
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SIHB33N60E-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
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SIHD180N60E-GE3 |
MOSFET 650V Vds; 30V Vgs DPAK (TO-252) |
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SIHD186N60EF-GE3 |
MOSFET EF Series Power MOSFET With Fast Body Diode; 4th Gen E Series Technology |
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SIHD2N80AE-GE3 |
MOSFET Nch 800V Vds 30V Vgs TO-252 (DPAK) |
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SIHB8N50D-GE3 |
MOSFET 500V Vds 30V Vgs D2PAK (TO-263) |
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SIHB33N60E-E3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
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SIHB33N60ET5-GE3 |
MOSFET 600V Vds E Series D2PAK TO-263 |
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SIHB30N60E-E3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
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Vishay |
SIHB6N65E-GE3 |
IGBT Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS |
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SIHB8N50D-GE3 |
IGBT Transistors MOSFET 500V 850mOhms@10V 8.7A N-Ch D-SRS |
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SIHB33N60EF-GE3 |
IGBT Transistors MOSFET N-Channel 600V |
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SIHB30N60E-E3 |
RF Bipolar Transistors MOSFET N-Channel 600V |
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SIHB33N60ET1-GE3 |
RF Bipolar Transistors MOSFET N-Channel 600V |
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SIHD12N50E-GE3 |
RF Bipolar Transistors MOSFET N-Channel 500V |
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SIHB30N60AEL-GE3 |
MOSFET N-CHAN 600V D2PAK |
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SIHD240N60E-GE3 |
MOSFET N-CHAN 600V DPAK TO-252 |
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SIHB30N60E-GE3 |
MOSFET N-CH 600V 29A D2PAK |
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SIHB33N60E-GE3 |
MOSFET N-CH 600V 33A TO-263 |
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SIHD14N60E-GE3 |
MOSFET N-CHANNEL 600V 13A DPAK |
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SIHD2N80E-GE3 |
MOSFET N-CH 800V 2.8A DPAK |
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SIHB33N60ET5-GE3 |
MOSFET N-CH 600V 33A TO263 |
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SIHB35N60E-GE3 |
MOSFET N-CH 600V 32A D2PAK TO263 |
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SIHB35N60EF-GE3 |
EF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V |
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SIHD180N60E-GE3 |
E Series Power MOSFET DPAK (TO-252), 195 m @ 10V |
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SIHD1K4N60E-GE3 |
E Series Power MOSFET DPAK (TO-252), 1450 m @ 10V |
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SIHB33N60E-E3 |
RF Bipolar Transistors MOSFET N-Channel 600V |
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SIHB30N60E-GE3-CUT TAPE |
全新原裝 |
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SIHB33N60EF-GE3-CUT TAPE |
全新原裝 |
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SIHB30N60E |
全新原裝 |
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SIHB30N60EGE3 |
Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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SIHB33N60E |
N-CH 600V 99mOhm 33A TO263 |
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SIHB6N65ET1-GE3 |
全新原裝 |
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SIHB8N50D |
全新原裝 |
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SIHC060606-R23M-R23 |
全新原裝 |
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SIHC060675-R20M-R23 |
全新原裝 |
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SIHC100808-R12K-R18 |
全新原裝 |
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SIHC100875-R15K-R29 |
全新原裝 |
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SIHC100875-R22K-R29 |
全新原裝 |
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SIHD12N50E |
全新原裝 |
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SIHD12N50EGE3 |
Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
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SIHD3N50D |
全新原裝 |
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