 | | |
| PartNumber | SIHA12N50E-E3 | SIHA12N60E-E3 |
| Description | MOSFET 500V Vds 30V Vgs TO-220 FULLPAK | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 550 V | 650 V |
| Id Continuous Drain Current | 10.5 A | 12 A |
| Rds On Drain Source Resistance | 380 mOhms | 380 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Qg Gate Charge | 25 nC | 29 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 32 W | 33 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Height | 15.49 mm | - |
| Length | 10.41 mm | - |
| Series | E | E |
| Width | 4.7 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 12 ns | 19 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 16 ns | 19 ns |
| Factory Pack Quantity | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 29 ns | 35 ns |
| Typical Turn On Delay Time | 13 ns | 14 ns |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHA12N50E-E3 | MOSFET 500V Vds 30V Vgs TO-220 FULLPAK | |
| SIHA12N60E-E3 | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | ||
Vishay |
SIHA12N50E-E3 | IGBT Transistors MOSFET N-Channel 500V | |
| SIHA12N60E-E3 | MOSFET N-CH 600V 12A TO-220 | ||
| SIHA12N60E | 全新原裝 |