PartNumber | SIHFR9120-GE3 | SIHFR9024TR-GE3 | SIHFR9014-GE3 |
Description | MOSFET -100V Vds 20V Vgs DPAK (TO-252) | MOSFET -60V Vds 20V Vgs DPAK (TO-252) | MOSFET -60V Vds 20V Vgs DPAK (TO-252) |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 60 V | 60 V |
Id Continuous Drain Current | 5.6 A | 8.8 A | 5.1 A |
Rds On Drain Source Resistance | 600 mOhms | 280 mOhms | 500 mOhms |
Vgs th Gate Source Threshold Voltage | - 4 V | - 4 V | - 4 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 18 nC | 19 nC | 12 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 42 W | 42 W | 25 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Series | SIH | SIH | SIH |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 1.5 S | 2.9 S | 1.4 S |
Fall Time | 25 ns | 29 ns | 31 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 29 ns | 68 ns | 63 ns |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 21 ns | 15 ns | 9.6 ns |
Typical Turn On Delay Time | 9.6 ns | 13 ns | 11 ns |