SIHG22N60E

SIHG22N60E-E3 vs SIHG22N60E-GE3 vs SIHG22N60EF-GE3

 
PartNumberSIHG22N60E-E3SIHG22N60E-GE3SIHG22N60EF-GE3
DescriptionMOSFET 600V Vds 30V Vgs TO-247ACMOSFET 600V Vds 30V Vgs TO-247ACMOSFET Nch 600V Vds 30V Vgs TO-247AC; w/diode
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247AC-3TO-247AC-3TO-247AC-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current21 A21 A19 A
Rds On Drain Source Resistance180 mOhms180 mOhms182 mOhms
Vgs th Gate Source Threshold Voltage4 V4 V2 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge57 nC57 nC96 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation227 W227 W179 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeTube
SeriesEEEF
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time35 ns35 ns25 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time27 ns27 ns21 ns
Factory Pack Quantity50050050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time66 ns66 ns58 ns
Typical Turn On Delay Time18 ns18 ns15 ns
Unit Weight1.340411 oz1.340411 oz-
Height-20.82 mm-
Length-15.87 mm-
Width-5.31 mm-
Transistor Type--1 N-Channel
Forward Transconductance Min--5.8 S
製造商 型號 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHG22N60E-E3 MOSFET 600V Vds 30V Vgs TO-247AC
SIHG22N60E-GE3 MOSFET 600V Vds 30V Vgs TO-247AC
SIHG22N60EF-GE3 MOSFET Nch 600V Vds 30V Vgs TO-247AC; w/diode
SIHG22N60EL-GE3 MOSFET 600V Vds 30V Vgs TO-247AC
Vishay
Vishay
SIHG22N60E-E3 MOSFET N-CH 600V 21A TO247AC
SIHG22N60E-GE3 MOSFET N-CH 600V 21A TO247AC
SIHG22N60EL-GE3 MOSFET N-CH 600V 21A TO247AC
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