 | | | |
| PartNumber | SPB02N60C3 | SPB021N04N | SPB02N60S5 |
| Description | IGBT Transistors MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3 | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
| Manufacturer | INFINEON | - | INF |
| Product Category | FETs - Single | - | FETs - Single |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| SPB02N60C3 | IGBT Transistors MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS C3 | ||
| SPB02N60S5 | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SPB021N04N | 全新原裝 | ||
| SPB02N60S5E3045A | 全新原裝 | ||
| SPB02N6OC3 | 全新原裝 | ||
Infineon Technologies |
SPB02N60C3ATMA1 | MOSFET N-CH 650V 1.8A D2PAK | |
| SPB02N60S5ATMA1 | MOSFET N-CH 600V 1.8A TO-263 |