SPB02N60S5

Mfr. #:: SPB02N60S5
製造商:: Rochester Electronics, LLC
描述:: Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
生命週期:: 製造商新產品
數據表:: SPB02N60S5 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

製造商: 中頻

產品分類: FET - 單

Tags: SPB02N60S, SPB02N60, SPB02N, SPB02, SPB0, SPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPB02N60S5 描述

***ponent Stockers USA: 1.8 A 600 V 3 ohm N-CHANNEL Si POWER MOSFET TO-263AB

***i-Key: MOSFET N-CH 600V 1.8A TO-263

***i-Key Marketplace: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***p One Stop: Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) D2PAK T/R

***el Electronic: Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

***ment14 APAC: MOSFET, N, 600V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):3ohm; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Transistor Case Style:D2-PAK; Package / Case:D2-PAK; Power Dissipation Pd:25W; Pulse Current Idm:5.4A; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds:600V; Voltage Vds Typ:650V; Voltage Vgs Rds on Measurement:10V

***et: Trans MOSFET N-CH 650V 1.8A 3-Pin TO-263 T/R

***i-Key Marketplace: MOSFET N-CH 650V 1.8A TO263-3

*** Electronics: N-CHANNEL POWER MOSFET

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

Market price

型號	製造商	描述	庫存	價格
SPB02N60S5ATMA1 DISTI # SPB02N60S5ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 1.8A TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	178In Stock	100:$0.8994 10:$1.1380 1:$1.2800
SPB02N60S5ATMA1 DISTI # SPB02N60S5ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 1.8A TO-263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	178In Stock	100:$0.8994 10:$1.1380 1:$1.2800
SPB02N60S5ATMA1 DISTI # SPB02N60S5ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 1.8A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
SPB02N60S5	Infineon Technologies AG	Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	700	1000:$0.3400 500:$0.3600 100:$0.3800 25:$0.3900 1:$0.4200
SPB02N60S5 DISTI # 726-SPB02N60S5	Infineon Technologies AG	MOSFET N-Ch 600V 1.8A D2PAK-2 CoolMOS S5 RoHS: Compliant	0

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