 |  | | |
| PartNumber | SPB02N60S5 | SPB02N60S5ATMA1 | SPB02N60S5E3045A |
| Description | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | MOSFET N-CH 600V 1.8A TO-263 | |
| Manufacturer | INF | - | - |
| Product Category | FETs - Single | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| SPB02N60S5 | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SPB02N60S5E3045A | 全新原裝 | ||
Infineon Technologies |
SPB02N60S5ATMA1 | MOSFET N-CH 600V 1.8A TO-263 |