 | | | |
| PartNumber | SQM100N02-3M5L_GE3 | SQM100N04-2m7_GE3 | SQM100N10-10-GE3 |
| Description | MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified | MOSFET 40V 100A 157W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQM100N10-10_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 40 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 2 mOhms | 2.25 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 110 nC | 145 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 150 W | 157 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 186 S | 201 S | - |
| Fall Time | 15 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns | 11 ns | - |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 38 ns | 48 ns | - |
| Typical Turn On Delay Time | 15 ns | 14 ns | - |
| Unit Weight | 0.077603 oz | 0.068654 oz | 0.077603 oz |
| Height | - | 4.83 mm | 4.83 mm |
| Length | - | 10.67 mm | 10.67 mm |
| Width | - | 9.65 mm | 9.65 mm |
| Part # Aliases | - | - | SYB85N10-10 |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQM10250E_GE3 | MOSFET 250V Vds 20V Vgs TO-263 | |
| SQM100N02-3M5L_GE3 | MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified | ||
| SQM100P10-19L_GE3 | MOSFET P Ch -100Vds 20Vgs AEC-Q101 Qualified | ||
| SQM100N10-10_GE3 | MOSFET 100V 100A 375W AEC-Q101 Qualified | ||
| SQM100N04-2m7_GE3 | MOSFET 40V 100A 157W AEC-Q101 Qualified | ||
| SQM100N10-10-GE3 | MOSFET RECOMMENDED ALT 78-SQM100N10-10_GE3 | ||
Yageo |
SQM10AJB-120K | Wirewound Resistors - Through Hole | |
| SQM10AJB-100R | Wirewound Resistors - Through Hole | ||
| SQM10AJB-110K | Wirewound Resistors - Through Hole | ||
| SQM10AJB-0R82 | Wirewound Resistors - Through Hole | ||
| SQM10AJB-0R51 | Wirewound Resistors - Through Hole | ||
| SQM10AJB-2R4 | Wirewound Resistors - Through Hole | ||
| SQM10AJB-15K | Wirewound Resistors - Through Hole | ||
| SQM10AJB-10R | Wirewound Resistors - Through Hole | ||
| SQM10AJB-1K2 | Wirewound Resistors - Through Hole | ||
| SQM10AJB-0R68 | Wirewound Resistors - Through Hole | ||
| SQM10AJB-0R27 | Wirewound Resistors - Through Hole | ||
| SQM10AJB-12K | Wirewound Resistors - Through Hole | ||
| SQM10AJB-16R | Wirewound Resistors - Through Hole | ||
| SQM10AJB-1R3 | Wirewound Resistors - Through Hole | ||
| SQM10AJB-1K | Wirewound Resistors - Through Hole | ||
| SQM10AJB-220R | Wirewound Resistors - Through Hole | ||
| SQM10AJB-2K | Wirewound Resistors - Through Hole | ||
| SQM10AJB-120R | Wirewound Resistors - Through Hole | ||
| SQM10AJB-0R75 | Wirewound Resistors - Through Hole | ||
| SQM10AJB-130R | Wirewound Resistors - Through Hole | ||
| SQM10AJB-13K | Wirewound Resistors - Through Hole | ||
| SQM10AJB-0R43 | Wirewound Resistors - Through Hole | ||
| SQM10AJB-150K | Wirewound Resistors - Through Hole | ||
| SQM10AJB-0R39 | Wirewound Resistors - Through Hole | ||
| SQM10AJB-0R11 | Wirewound Resistors - Through Hole | ||
| SQM10AJB-1R2 | Wirewound Resistors - Through Hole | ||
| SQM10AJB-18R | Wirewound Resistors - Through Hole | ||
| SQM10AJB-20K | Wirewound Resistors - Through Hole | ||
| SQM10AJB-270R | Wirewound Resistors - Through Hole | ||
| SQM10AJB-100K | Wirewound Resistors - Through Hole | ||
| SQM10AJB-2R7 | Wirewound Resistors - Through Hole | ||
| SQM10-150RJB1 | 全新原裝 | ||
| SQM10-4K7JB1 | 全新原裝 | ||
| SQM100N04-2M7-GE3 | MOSFET RECOMMENDED ALT 78-SQM100N04-2M7_GE3 | ||
| SQM100N04-3M5 | 全新原裝 | ||
| SQM100N04-3M5-GE3 | MOSFET RECOMMENDED ALT 78-SQM100N04-2M7_GE3 | ||
| SQM100N10-10 | 全新原裝 | ||
| SQM100N10-10-GE3 | N-CHANNEL 100-V (D-S) 175C MOS | ||
| SQM100N1010GE3 | Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SQM1050T1 | 全新原裝 | ||
| SQM10-5K1J | Wirewound Resistors - Through Hole 10W 5.1K OHM 5% RESISTOR RADIAL | ||
Vishay |
SQM100N04-2M7_GE3 | MOSFET N-CH 40V 100A TO-263 | |
| SQM100N10-10_GE3 | MOSFET N-CH 100V 100A TO-263 | ||
| SQM100P10-19L_GE3 | MOSFET P-CH 100V 93A TO263 |