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| PartNumber | SQM200N04-1m1L_GE3 | SQM200N04-1m7L_GE3 | SQM200N04-1M7L-GE3 |
| Description | MOSFET 40V 200A, 375W AEC-Q101 Qualified | MOSFET 40V 200A 375 AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 781-SQM200N041M7LGE |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-7 | TO-263-7 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 200 A | 200 A | - |
| Rds On Drain Source Resistance | 800 uOhms | 1.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 413 nC | 291 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 375 W | 375 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 4.82 mm | 4.82 mm | - |
| Length | 10.41 mm | 10.41 mm | - |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.65 mm | 9.65 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 219 S | 181 S | - |
| Fall Time | 126 ns | 16 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 17 ns | - |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 443 ns | 70 ns | - |
| Typical Turn On Delay Time | 13 ns | 22 ns | - |
| Unit Weight | 0.056438 oz | 0.056438 oz | 0.056438 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQM200N04-1m1L_GE3 | MOSFET 40V 200A, 375W AEC-Q101 Qualified | |
| SQM200N04-1m7L_GE3 | MOSFET 40V 200A 375 AEC-Q101 Qualified | ||
| SQM200N04-1M8_GE3 | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | ||
| SQM200N04-1M7L-GE3 | MOSFET RECOMMENDED ALT 781-SQM200N041M7LGE | ||
| SQM200N04-1M7L-GE3 | RF Bipolar Transistors MOSFET 40V 200A 375 TrenchFET | ||
Yageo |
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| SQM200JB-82R | Wirewound Resistors - Through Hole | ||
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| SQM200JB-36K | Wirewound Resistors - Through Hole | ||
| SQM200JB-620R | Wirewound Resistors - Through Hole | ||
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| SQM200JB-8R2 | Wirewound Resistors - Through Hole | ||
| SQM200JB-3R3 | Wirewound Resistors - Through Hole | ||
| SQM200JB-4R3 | Wirewound Resistors - Through Hole | ||
| SQM200JB-20K | Wirewound Resistors - Through Hole | ||
| SQM200JB-82K | Wirewound Resistors - Through Hole | ||
| SQM200JB-75R | Wirewound Resistors - Through Hole | ||
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| SQM200JB-4K3 | Wirewound Resistors - Through Hole | ||
| SQM200JB-2R2 | Wirewound Resistors - Through Hole | ||
| SQM200JB-2R4 | Wirewound Resistors - Through Hole | ||
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| SQM200JB-470R | Wirewound Resistors - Through Hole | ||
| SQM200JB-56R | Wirewound Resistors - Through Hole | ||
| SQM200JB-68R | 全新原裝 | ||
Vishay |
SQM200N04-1M7L_GE3 | MOSFET N-CH 40V 200A TO-263 | |
| SQM200N04-1M1L_GE3 | MOSFET N-CH 40V 200A TO-263 | ||
| SQM200N04-1M8_GE3 | MOSFET N-CH 40V 200A TO263-7 | ||
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| SQM200N04-1M8 GE3 | 全新原裝 | ||
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