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| PartNumber | SQM50P06-15L_GE3 | SQM50P06-15L-GE3 | SQM50P06-15L |
| Description | MOSFET P-Channel 60V AEC-Q101 Qualified | RF Bipolar Transistors MOSFET P-Channel 60V Automotive MOSFET | |
| Manufacturer | Vishay | Vishay / Siliconix | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 13 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 155 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 150 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | TrenchFET | - |
| Series | SQ | SQ Series | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 46 S | - | - |
| Fall Time | 16 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 60 ns | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Unit Weight | 0.077603 oz | - | - |
| Vds Drain Source Breakdown Voltage | - | - 60 V | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQM50P06-15L_GE3 | MOSFET P-Channel 60V AEC-Q101 Qualified | |
| SQM50P06-15L-GE3 | RF Bipolar Transistors MOSFET P-Channel 60V Automotive MOSFET | ||
| SQM50P06-15L | 全新原裝 | ||
Vishay |
SQM50P06-15L_GE3 | MOSFET P-CHANNEL 60V 50A TO263 |