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| PartNumber | SSM6N56FE,LM | SSM6N56FE | SSM6N56FELMCB |
| Description | MOSFET Small-signal MOSFET N-Channel | ||
| Manufacturer | Toshiba | Toshiba Semiconductor and Storage | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | ES6-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 800 mA | - | - |
| Rds On Drain Source Resistance | 235 mOhms, 235 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 1 nC, 1 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 250 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Series | SSM6N56 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 1.2 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 8.5 ns, 8.5 ns | - | - |
| Typical Turn On Delay Time | 5.5 ns, 5.5 ns | - | - |
| Unit Weight | 0.000289 oz | - | - |
| Package Case | - | SOT-563, SOT-666 | - |
| Operating Temperature | - | 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | ES6 | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 150mW | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 55pF @ 10V | - |
| FET Feature | - | Logic Level Gate, 1.5V Drive | - |
| Current Continuous Drain Id 25°C | - | 800mA | - |
| Rds On Max Id Vgs | - | 235 mOhm @ 800mA, 4.5V | - |
| Vgs th Max Id | - | 1V @ 1mA | - |
| Gate Charge Qg Vgs | - | 1nC @ 4.5V | - |