PartNumber | STGB5H60DF | STGB40V60F | STGB4M65DF2 |
Description | IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed | IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed | IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | D2PAK-3 | D2PAK | D2PAK-3 |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 600 V | 600 V | 650 V |
Collector Emitter Saturation Voltage | 1.5 V | 1.8 V | 1.6 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 10 A | 80 A | 8 A |
Pd Power Dissipation | 88 W | 283 W | 68 W |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Series | STGB5H60DF | STGB40V60F | STGB4M65DF2 |
Packaging | Reel | Reel | - |
Continuous Collector Current Ic Max | 10 A | - | 8 A |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Continuous Collector Current | 5 A | - | - |
Gate Emitter Leakage Current | +/- 250 nA | 250 nA | +/- 250 uA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | - | 0.070548 oz | - |