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| PartNumber | STI100N10F7 | STI10NM60N | STI10N62K3 |
| Description | MOSFET | MOSFET N-CH 600V 0.53Ohm 10A Mdmesh II | MOSFET N-CH 620V 8.4A I2PAK |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Series | STI100N10F7 | STI10NM60N | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| RoHS | - | Y | - |
| Mounting Style | - | Through Hole | - |
| Package / Case | - | TO-262-3 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 650 V | - |
| Id Continuous Drain Current | - | 10 A | - |
| Rds On Drain Source Resistance | - | 550 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Vgs Gate Source Voltage | - | 25 V | - |
| Qg Gate Charge | - | 19 nC | - |
| Minimum Operating Temperature | - | - 50 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 70 W | - |
| Configuration | - | Single | - |
| Packaging | - | Tube | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 15 ns | - |
| Rise Time | - | 12 ns | - |
| Typical Turn Off Delay Time | - | 32 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |
| Unit Weight | - | 0.050717 oz | - |