 | | |
| PartNumber | STP30NM60ND | STP30NM60N |
| Description | MOSFET N-channel 600V, 25A FDMesh II | MOSFET N-channel 600V, 25A Power II Mdmesh |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 25 A | 25 A |
| Rds On Drain Source Resistance | 130 mOhms | 130 mOhms |
| Vgs Gate Source Voltage | 25 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 190 W | 190 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Series | STB30NM60ND | STB30NM60N |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 75 ns | 70 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 50 ns | 24 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 110 ns | 125 ns |
| Typical Turn On Delay Time | 20 ns | 20 ns |
| Unit Weight | 1.340411 oz | 0.011640 oz |
| Height | - | 9.15 mm |
| Length | - | 10.4 mm |
| Width | - | 4.6 mm |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STP30NM60ND | MOSFET N-channel 600V, 25A FDMesh II | |
| STP30NM60N | MOSFET N-channel 600V, 25A Power II Mdmesh | ||
| STP30NM60N | MOSFET N-CH 600V 25A TO-220 | ||
| STP30NM60ND | MOSFET N-CH 600V 25A TO-220 | ||
| STP30NM60N P30NM60N | 全新原裝 | ||
| STP30NS15L | 全新原裝 | ||
| STP30NS15LFP,30NS15LFP | 全新原裝 | ||
| STP30NS15LFP | 全新原裝 |