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| PartNumber | TC58NYG0S3HBAI6 | TC58NYG0S3EBAI4 |
| Description | NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) | NAND Flash 1.8V 1Gb 43nm SLC NAND (EEPROM) |
| Manufacturer | Toshiba | Toshiba |
| Product Category | NAND Flash | NAND Flash |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | VFBGA-67 | TFBGA-63 |
| Memory Size | 1 Gbit | 1 Gbit |
| Interface Type | Parallel | Parallel |
| Organization | 128 M x 8 | 128 M x 8 |
| Data Bus Width | 8 bit | 8 bit |
| Supply Voltage Min | 1.7 V | 1.7 V |
| Supply Voltage Max | 1.95 V | 1.95 V |
| Supply Current Max | 30 mA | 30 mA |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 85 C |
| Packaging | Tray | Tray |
| Memory Type | NAND | NAND |
| Brand | Toshiba Memory | Toshiba Memory |
| Maximum Clock Frequency | - | - |
| Moisture Sensitive | Yes | Yes |
| Product Type | NAND Flash | NAND Flash |
| Factory Pack Quantity | 338 | 210 |
| Subcategory | Memory & Data Storage | Memory & Data Storage |
| Timing Type | - | Synchronous |
| Product | - | NAND Flash |
| Speed | - | 25 ns |
| Architecture | - | Block Erase |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba Memory |
TC58NYG0S3HBAI6 | NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) | |
| TC58NYG0S3EBAI4 | NAND Flash 1.8V 1Gb 43nm SLC NAND (EEPROM) | ||
| TC58NYG0S3EBAI4 | SLC NAND Flash Serial 1.8V 1Gbit 128M x 8bit 63-Pin TFBGA - Trays (Alt: TC58NYG0S3EBAI4) | ||
| TC58NYG0S3HBAI6 | EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM | ||
| TC58NYG0S3EBA14 | 全新原裝 | ||
| TC58NYG0S3HBAI6-ND | 全新原裝 | ||
| TC58NYG0S3EBAI4JRH | 全新原裝 |