 |  | | |
| PartNumber | TK12A80W,S4X | TK12A60W,S4VX | TK12A60U(STA4,Q,M) |
| Description | MOSFET N-Ch 800V 1400pF 23nC 11.5A 45W | MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC | MOSFET N-Ch DTMOS II RDS 0.36 Ohm Yfs 7.0 |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220SIS-3 | TO-220-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 600 V | 600 V |
| Id Continuous Drain Current | 11.5 A | 11.5 A | 12 A |
| Rds On Drain Source Resistance | 380 mOhms | 300 mOhms | 400 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 2.7 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Qg Gate Charge | 23 nC | 25 nC | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 45 W | 35 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | DTMOSIV | DTMOSIV | DTMOSIV |
| Series | TK12A80W | TK12A60W | TK12A60U |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Toshiba | Toshiba | Toshiba |
| Fall Time | 11 ns | 5.5 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 40 ns | 23 ns | - |
| Factory Pack Quantity | 50 | 50 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 130 ns | 85 ns | - |
| Typical Turn On Delay Time | 70 ns | 45 ns | - |
| Unit Weight | 0.068784 oz | 0.211644 oz | - |
| Height | - | 15 mm | 15 mm |
| Length | - | 10 mm | 10 mm |
| Width | - | 4.5 mm | 4.5 mm |
| Packaging | - | - | Reel |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
TK12A80W,S4X | MOSFET N-Ch 800V 1400pF 23nC 11.5A 45W | |
| TK12E80W,S1X | MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W | ||
| TK12E60W,S1VX | MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC | ||
| TK12A60W,S4VX | MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC | ||
| TK12J60U(F) | MOSFET MOSFET DTMOS-II N-Ch 600V 12A | ||
| TK12P60W,RVQ | MOSFET DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC | ||
| TK12A60U(STA4,Q,M) | MOSFET N-Ch DTMOS II RDS 0.36 Ohm Yfs 7.0 | ||
| TK12E60U,S1X(S | MOSFET N-Ch MOS 12A 600V 144W 720pF 0.4 | ||
| TK12E60W,S1VX | Darlington Transistors MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC | ||
| TK12A60U(STA4,Q,M) | MOSFET N-Ch DTMOS II RDS 0.36 Ohm Yfs 7.0 | ||
| TK12J60U(F) | MOSFET MOSFET DTMOS-II N-Ch 600V 12A | ||
| TK12E60U,S1X(S | MOSFET N-Ch MOS 12A 600V 144W 720pF 0.4 | ||
| TK12P60W,RVQ | MOSFET N CH 600V 11.5A DPAK | ||
| TK12A60U(Q,M) | MOSFET MOSFET DTMOS-II N-CH 600V, 12A | ||
| TK12P60W,RVQ(S | Trans MOSFET N-CH 600V 11.5A 3-Pin DPAK (Alt: TK12P60W,RVQ(S) | ||
| TK12A60D(STA4QM) | 全新原裝 | ||
| TK12A60D,K12A60D, | 全新原裝 | ||
| TK12A60D/U | 全新原裝 | ||
| TK12A60U | 全新原裝 | ||
| TK12A60U(STA4) | 全新原裝 | ||
| TK12A60U,K12A60U | 全新原裝 | ||
| TK12A60U,K12A60U, | 全新原裝 | ||
| TK12A60W | 全新原裝 | ||
| TK12A60W S4VX(M | 全新原裝 | ||
| TK12A60WS4VX(M | 全新原裝 | ||
| TK12A65D | 全新原裝 | ||
| TK12A65D SMK1265F | 全新原裝 | ||
| TK12A65D(STA4.Q.M) | 全新原裝 | ||
| TK12A65D,K12A65D, | 全新原裝 | ||
| TK12A80W | 全新原裝 | ||
| TK12D60U(Q) | 全新原裝 | ||
| TK12E60W | 全新原裝 | ||
| TK12E80W | 全新原裝 | ||
| TK12J60U | 全新原裝 | ||
| TK12J60U,TK11A60D, | 全新原裝 | ||
| TK12J60W | 全新原裝 | ||
| TK12P60W | 全新原裝 | ||
| TK12P60WRVQ(S | 全新原裝 | ||
| TK12E60W,S1VX(S | Power MOSFET Drivers | ||
| TK12E60WS1VX | MOSFET POWER MOSFET TRANSISTOR | ||
| TK12E60WS1VXS | 全新原裝 | ||
| TK12J60UF | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | ||
| TK12A65D,S5Q(J | MOSFETs | ||
| TK12A60D(STA4QM)-ND | 全新原裝 | ||
| TK12A60U(QM)-ND | 全新原裝 | ||
| TK12A60WS4VX-ND | 全新原裝 | ||
| TK12A80WS4X-ND | 全新原裝 | ||
| TK12E60WS1VX-ND | 全新原裝 | ||
| TK12E80WS1X-ND | 全新原裝 | ||
| TK12J60UF-ND | 全新原裝 |