PartNumber | TK100A06N1,S4X | TK100A10N1,S4X | TK100A08N1,S4X |
Description | MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V | MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V | MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220FP-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 100 V | 80 V |
Id Continuous Drain Current | 100 A | 100 A | 100 A |
Rds On Drain Source Resistance | 2.2 mOhms | 3.1 mOhms | 2.6 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 4 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 140 nC | 140 nC | 130 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 45 W | 45 W | 45 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | DTMOSIV | DTMOSIV | DTMOSIV |
Height | 15 mm | 15 mm | 15 mm |
Length | 10 mm | 10 mm | 10 mm |
Series | TK100A06N1 | TK100A10N1 | TK100A08N1 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.5 mm | 4.5 mm | 4.5 mm |
Brand | Toshiba | Toshiba | Toshiba |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |