PartNumber | TK10P60W,RVQ | TK10E60W,S1VX | TK10J80E,S1E |
Description | MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | Through Hole |
Package / Case | TO-252-3 | TO-220-3 | TO-3PN-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 800 V |
Id Continuous Drain Current | 9.7 A | 9.7 A | 10 A |
Rds On Drain Source Resistance | 380 mOhms | 380 mOhms | 700 mOhms |
Vgs th Gate Source Threshold Voltage | 3.7 V | 3.7 V | 4 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 20 nC | 20 nC | 46 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 80 W | 100 W | 250 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | - | - |
Height | 2.3 mm | 15.1 mm | 20 mm |
Length | 6.5 mm | 10.16 mm | 15.5 mm |
Series | TK10P60W | TK10E60W | TK10J80E |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.5 mm | 4.45 mm | 4.5 mm |
Brand | Toshiba | Toshiba | Toshiba |
Fall Time | 5.5 ns | 5.5 ns | 35 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 22 ns | 22 ns | 40 ns |
Factory Pack Quantity | 2000 | 50 | 25 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 75 ns | 75 ns | 140 ns |
Typical Turn On Delay Time | 45 ns | 45 ns | 80 ns |
Unit Weight | 0.139332 oz | 0.211644 oz | 0.245577 oz |