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| PartNumber | TK100S04N1L,LQ | TK100S04N1L | TK100S04N1LLQ |
| Description | MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK | MOSFET POWER N-CH 100A PW-MOLD3, RL | MOSFET POWER MOSFET TRANSISTOR |
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 1.9 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 76 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 100 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | TK100S04N1L | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 19 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 80 ns | - | - |
| Typical Turn On Delay Time | 23 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
TK100S04N1L,LQ | MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK | |
| TK100S04N1L | MOSFET POWER N-CH 100A PW-MOLD3, RL | ||
| TK100S04N1LLQ | MOSFET POWER MOSFET TRANSISTOR | ||
| TK100S04N1L,LQ | MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK | ||
| TK100S04N1LLQCT-ND | 全新原裝 | ||
| TK100S04N1LLQDKR-ND | 全新原裝 | ||
| TK100S04N1LLQTR-ND | 全新原裝 |