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| PartNumber | TK10A60D(STA4,Q,M) | TK10A50D(STA4,Q,M) | TK10A55D(STA4,Q,M) |
| Description | MOSFET MOSFET N-ch 600V 10A | MOSFET N-Ch MOS 10A 500V 45W 1050pF 0.72 | MOSFET N-Ch 500V VDSS 700V 45W 1200pF 10A |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220SIS-3 | TO-220FP-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 500 V | 550 V |
| Id Continuous Drain Current | 10 A | 10 A | 10 A |
| Rds On Drain Source Resistance | 750 mOhms | 620 mOhms | 720 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 25 nC | 20 nC | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 45 W | 45 W | 45 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | DTMOSIV | DTMOSIV |
| Height | 15 mm | 15 mm | 15 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | TK10A60D | TK10A50D | TK10A55D |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | Field Effect Transistor Silicon N Channel MOS Type | N-Channel Silicon MOSFET | - |
| Width | 4.5 mm | 4.5 mm | 4.5 mm |
| Brand | Toshiba | Toshiba | Toshiba |
| Forward Transconductance Min | 1.5 S | - | - |
| Fall Time | 15 ns | 10 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 22 ns | 25 ns | - |
| Factory Pack Quantity | 2500 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 100 ns | 75 ns | - |
| Typical Turn On Delay Time | 55 ns | 60 ns | - |
| Unit Weight | 0.211644 oz | 0.080072 oz | - |
| Product | - | MOSFET | - |
