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| PartNumber | TK10Q60W,S1VQ | TK10Q60W | TK10Q60W,S1VQ(S |
| Description | MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-251-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 9.7 A | - | - |
| Rds On Drain Source Resistance | 327 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 20 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 80 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Height | 6.1 mm | - | - |
| Length | 6.65 mm | - | - |
| Series | TK10Q60W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 2.3 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 5.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 22 ns | - | - |
| Factory Pack Quantity | 75 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 75 ns | - | - |
| Typical Turn On Delay Time | 45 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
TK10Q60W,S1VQ | MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A | |
| TK10Q60W | 全新原裝 | ||
| TK10Q60W,S1VQ(S | 全新原裝 | ||
| TK10Q60W,S1VQ | Darlington Transistors MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A | ||
| TK10Q60WS1VQ | MOSFET POWER MOSFET TRANSISTOR | ||
| TK10Q60WS1VQ-ND | 全新原裝 |