PartNumber | TK31E60X,S1X | TK31A60W,S4VX | TK31E60W,S1VX |
Description | MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V) | MOSFET N-Ch 30.8A 45W FET 600V 3000pF 86nC | MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220FP-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 7.7 A | 30.8 A | 30.8 A |
Rds On Drain Source Resistance | 73 mOhms | 73 mOhms | 73 mOhms |
Vgs th Gate Source Threshold Voltage | 3.5 V | 3.7 V | 3.7 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 65 nC | 86 nC | 86 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 230 W | 45 W | 230 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | DTMOSIV | - | DTMOSIV |
Height | 15.1 mm | 15 mm | 15.1 mm |
Length | 10.16 mm | 10 mm | 10.16 mm |
Series | TK31E60X | TK31A60W | TK31E60W |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.45 mm | 4.5 mm | 4.45 mm |
Brand | Toshiba | Toshiba | Toshiba |
Fall Time | 6 ns | 8.5 ns | 8.5 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 22 ns | 32 ns | 32 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 130 ns | 165 ns | 165 ns |
Typical Turn On Delay Time | 55 ns | 70 ns | 70 ns |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |