TK40E10N

TK40E10N1,S1X vs TK40E10N1 vs TK40E10N1 S1X

 
PartNumberTK40E10N1,S1XTK40E10N1TK40E10N1 S1X
DescriptionMOSFET 40V N0Ch PWR FET 90A 126W 3000pF
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance8.2 mOhms--
Vgs Gate Source Voltage10 V--
Pd Power Dissipation126 W--
ConfigurationSingle--
Height15.1 mm--
Length10.16 mm--
SeriesTK40E10N1--
Transistor Type1 N-Channel--
Width4.45 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
製造商 型號 描述 RFQ
Toshiba
Toshiba
TK40E10N1,S1X MOSFET 40V N0Ch PWR FET 90A 126W 3000pF
TK40E10N1,S1X MOSFET 40V N0Ch PWR FET 90A 126W 3000pF
TK40E10N1 全新原裝
TK40E10N1 S1X 全新原裝
TK40E10N1,S1X(S 全新原裝
TK40E10N1S1X X35 PB-F POWER MOSFET TRANSISTOR TO-220AB(OS) MOQ=50 PD=190W F=1MHZ - Rail/Tube (Alt: TK40E10N1,S1X)
TK40E10N1S1X(S 全新原裝
TK40E10N1S1X-ND 全新原裝
Top