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| PartNumber | TPH1R712MD,L1Q | TPH1R712MD,L1APQ | TPH1R712MD,L1APQ(M |
| Description | MOSFET P-Channel Mosfet 20V UMOS-VI | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOP Advance-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 60 A | - | - |
| Rds On Drain Source Resistance | 1.7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 182 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 78 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.95 mm | - | - |
| Length | 5 mm | - | - |
| Series | TPH1R712MD | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 512 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 14 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 1620 ns | - | - |
| Typical Turn On Delay Time | 27 ns | - | - |
| Unit Weight | 0.002434 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
TPH1R712MD,L1Q | MOSFET P-Channel Mosfet 20V UMOS-VI | |
| TPH1R712MD,L1Q | Trans MOSFET P-CH Si 20V 60A 8-Pin SOP Advance T/R | ||
| TPH1R712MD,L1APQ | 全新原裝 | ||
| TPH1R712MD,L1APQ(M | 全新原裝 |