Silicon Carbide Transistor advantages include low switching losses, higher efficiency, high temperature operation and high short circuit withstand capability.
By GeneSiC Semiconductor 313
Features superior surge current capability, positive temperature coefficient of Vf, superior figure of merit Qc/If and much more.
By GeneSiC Semiconductor 302
GeneSiC is offering and continuously improving innovative Silicon Carbide power rectifiers for high voltage rating applications, with significant advantages.
By GeneSiC Semiconductor 272
Silicon Carbide Power Schottky Diode feature superior surge current capability and positive temperature coefficient of Vf.
By GeneSiC Semiconductor 203
MBR40044CT, 400 A Schottky diode features high surge capability and types up to 100 V VRRM.
By GeneSiC Semiconductor 328
MBR60040CT, 600 A silicon power schottky diode features high surge capability and types up to 100 V VRRM.
By GeneSiC Semiconductor 353
1N3214 features high surge capability and types up to 600 V VRRM.
By GeneSiC Semiconductor 370
