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Wolfspeed presents the Z-Rec™ 1,700 V junction barrier Schottky (JBS) diode products. Leveraging silicon carbide’s unique advantages over silicon.

Wolfspeed's 650 V, 4 A, 6 A, 8 A, and 10 A silicon carbide Schottky diodes is added to its world class Z-Rec™ Schottky diode product line.

Wolfspeed's Z-REC rectifier boasts a small package and zero reverse-recovery energy.

Silicon Carbide Power MOSFETs

Wolfspeed’s CMPA1D1E025F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

Wolfspeed's SpeedFit is a free and powerful online circuit simulation tool that is 100% dedicated to simulating and evaluating the performance of SiC power devices.

Wolfspeed’s CGHV14800 is a GaN high-electron mobility transistor (HEMT) designed specifically with high-efficiency, high-gain, and wide-bandwidth capabilities.

Wolfspeed's CGHV59070, operating from a 50 V rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Wolfspeed’s CGHV27060MP is a 60 W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small (4.4 mm x 6.5 mm) plastic SMT package.

Wolfspeed’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Wolfspeed's CG2H40010 gallium nitride (GaN) high electron mobility transistor (HEMT) is available in a screw-down, flange package.

Cree Wolfspeed's CG2H40045 RF Power GaN HEMT offers a general purpose, broadband solution to a variety of RF and microwave applications.

Wolfspeed’s CGHV40050 operates from a 50 V rail and offers a general-purpose, broadband solution to a variety of RF and microwave applications.

Wolfspeed's CGH27015 GaN HEMT is designed for high-efficiency, high-gain, and wide bandwidth capabilities in amplifier applications.

Wolfspeed’s C3M0065090J 900 V MOSFET enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

Cree Wolfspeed's C5D 1700 V Z-Rec® Schottky diode products were designed to help improve system efficiency.

Wolfspeed’s advanced SiC MOSFET technology is offered in low-inductance discrete packing, allowing engineers to take advantage of C3M™ planar MOSFET chips.

Wolfspeed's automotive-qualified, PPAP-capable, and humidity-resistant MOSFET offers low switching losses and high figure of merit.

Wolfspeed’s CGHV40030 GaN high-electron-mobility transistor is designed specifically for high-efficiency, high gain, and wide bandwidth capabilities.

Wolfspeed’s CG2H40025 GaN high-electron-mobility transistor offers a general purpose broadband solution for a variety of RF and microwave applications.