 |  |  | |
| PartNumber | FGH50N3 | FGH50N6S2D | FGH50N6S2 |
| Description | IGBT Transistors 300V PT N-Channel | IGBT Transistors Comp 600V N-Ch | IGBT 600V 75A 463W TO247 |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | E | E | - |
| Technology | Si | Si | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 300 V | 600 V | - |
| Collector Emitter Saturation Voltage | 1.3 V | 1.9 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 75 A | 75 A | - |
| Pd Power Dissipation | 463 W | 463 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | FGH50N3 | FGH50N6S2D | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 75 A | 75 A | - |
| Height | 20.82 mm | 20.82 mm | - |
| Length | 15.87 mm | 15.87 mm | - |
| Width | 4.82 mm | 4.82 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Continuous Collector Current | 75 A | 75 A | - |
| Gate Emitter Leakage Current | +/- 250 nA | +/- 250 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 450 | 450 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FGH50N3_NL | FGH50N6S2D_NL | - |
| Unit Weight | 0.225401 oz | 0.225401 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FGH50N3 | IGBT Transistors 300V PT N-Channel | |
| FGH50N6S2D | IGBT Transistors Comp 600V N-Ch | ||
ON Semiconductor |
FGH50N3 | IGBT 300V 75A 463W TO247 | |
| FGH50N6S2 | IGBT 600V 75A 463W TO247 | ||
| FGH50N6S2D | IGBT 600V 75A 463W TO247 | ||
| FGH50N3-NL | 全新原裝 | ||
| FGH50N3PWD | 全新原裝 | ||
| FGH50N60S2D | 全新原裝 | ||
| FGH50N6S2 ABU | 全新原裝 | ||
| FGH50N6S2/D | 全新原裝 | ||
| FGH50N6S2D AG | 全新原裝 | ||
| FGH50N6S2D,50N6S2D | 全新原裝 |