OMO ElectronicOMO Electronic
Expand menu
0 購物車

IPB090N06N3GATMA1

IPB090N06N3GATMA1
Mfr. #:
IPB090N06N3GATMA1
製造商:
Infineon Technologies
描述:
MOSFET MV POWER MOS
生命週期:
製造商新產品
數據表:
IPB090N06N3GATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-3
通道數：
1 Channel
晶體管極性：
N通道
配置：
單身的
商品名：
優化MOS
打包：
捲軸
高度：
4.4 mm
長度：
10 mm
晶體管類型：
1 N-Channel
寬度：
9.25 mm
品牌：
英飛凌科技
產品類別：
MOSFET
子類別：
MOSFET
第 # 部分別名：
G IPB090N06N3 IPB9N6N3GXT SP000398042
單位重量：
0.139332 oz
Tags
IPB090, IPB09, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 9 mOhm 36 nC OptiMOS™ Power Mosfet - D2PAK
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:71W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
型號 製造商 描述 庫存 價格
IPB090N06N3GATMA1
DISTI # V72:2272_06384657		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		473
  • 250:$0.7398
  • 100:$0.7473
  • 25:$0.9646
  • 10:$1.0716
  • 1:$1.2131
IPB090N06N3GATMA1
DISTI # V36:1790_06384657		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$0.3640
  • 500000:$0.3644
  • 100000:$0.4040
  • 10000:$0.4793
  • 1000:$0.4922
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		860In Stock
  • 500:$0.6422
  • 100:$0.7773
  • 10:$0.9970
  • 1:$1.1200
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		860In Stock
  • 500:$0.6422
  • 100:$0.7773
  • 10:$0.9970
  • 1:$1.1200
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.4200
  • 5000:$0.4364
  • 2000:$0.4594
  • 1000:$0.4922
IPB090N06N3GATMA1
DISTI # 27089772		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		473
  • 21:$1.2131
IPB090N06N3GATMA1
DISTI # SP000398042		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R (Alt: SP000398042)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 22800
  • 10000:€0.3159
  • 6000:€0.3409
  • 4000:€0.3689
  • 2000:€0.4029
  • 1000:€0.4919
IPB090N06N3GXT
DISTI # IPB090N06N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB090N06N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.3169
  • 6000:$0.3229
  • 4000:$0.3339
  • 2000:$0.3469
  • 1000:$0.3599
IPB090N06N3 G
DISTI # 726-IPB090N06N3G		Infineon Technologies AGMOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant		1019
  • 1:$1.0200
  • 10:$0.8750
  • 100:$0.6720
  • 500:$0.5940
  • 1000:$0.4690
  • 2000:$0.4160
  • 10000:$0.4010
IPB090N06N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		2000
  • 1000:$0.3200
  • 500:$0.3300
  • 100:$0.3500
  • 25:$0.3600
  • 1:$0.3900
IPB090N06N3GATMA1
DISTI # 8269529P		Infineon Technologies AGMOSFET N-CH 50A 60V OPTIMOS3 TO263, RL775
  • 1000:£0.3370
  • 500:£0.4250
  • 250:£0.4810
  • 50:£0.5540
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,50A,71W,PG-TO263-341
  • 1000:$0.4257
  • 100:$0.4572
  • 10:$0.5270
  • 3:$0.6553
  • 1:$0.7615
IPB090N06N3GATMA1
DISTI # 1775550		Infineon Technologies AGMOSFET, N CH, 50A, 60V, PG-TO263-31790
  • 500:£0.4680
  • 250:£0.5360
  • 100:£0.6030
  • 25:£0.7630
  • 5:£0.9400
圖片 型號 描述
IPB090N06N3 G

Mfr.#: IPB090N06N3 G

OMO.#: OMO-IPB090N06N3-G

 MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
IPB090N06N3GATMA1

Mfr.#: IPB090N06N3GATMA1

OMO.#: OMO-IPB090N06N3GATMA1

 MOSFET MV POWER MOS
IPB090N06N3 G

Mfr.#: IPB090N06N3 G

OMO.#: OMO-IPB090N06N3-G-1190

 IPB090N06N3 G
IPB090N06N3G

Mfr.#: IPB090N06N3G

OMO.#: OMO-IPB090N06N3G-1190

 Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB090N06N3GATMA1

Mfr.#: IPB090N06N3GATMA1

OMO.#: OMO-IPB090N06N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 50A TO263-3
IPB090N06N3GATMA1 , 2SD1

Mfr.#: IPB090N06N3GATMA1 , 2SD1

OMO.#: OMO-IPB090N06N3GATMA1-2SD1-1190

 全新原裝
IPB090N06N3GS

Mfr.#: IPB090N06N3GS

OMO.#: OMO-IPB090N06N3GS-1190

 全新原裝
可用性
庫存:
Available
訂購:
2000
輸入數量:
IPB090N06N3GATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
從...開始
Top