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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IPB090N06N3GATMA1 DISTI # V72:2272_06384657 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 473 |
|
| IPB090N06N3GATMA1 DISTI # V36:1790_06384657 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 0 |
|
| IPB090N06N3GATMA1 DISTI # IPB090N06N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 860In Stock |
|
| IPB090N06N3GATMA1 DISTI # IPB090N06N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 860In Stock |
|
| IPB090N06N3GATMA1 DISTI # IPB090N06N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPB090N06N3 G DISTI # 30605633 | Infineon Technologies AG | IPB090N06N3 G RoHS: Compliant | 480 |
|
| IPB090N06N3GATMA1 DISTI # 27089772 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 473 |
|
| IPB090N06N3GATMA1 DISTI # SP000398042 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R (Alt: SP000398042) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 22800 |
|
| IPB090N06N3 G DISTI # IPB090N06N3G | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R - Bulk (Alt: IPB090N06N3G) RoHS: Not Compliant Min Qty: 807 Container: Bulk | Americas - 0 |
|
| IPB090N06N3GXT DISTI # IPB090N06N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB090N06N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB090N06N3 G DISTI # 726-IPB090N06N3G | Infineon Technologies AG | MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant | 1019 |
|
| IPB090N06N3G | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 450 |
|
| IPB090N06N3GATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 2000 |
|
| IPB090N06N3GATMA1 DISTI # 8269529P | Infineon Technologies AG | MOSFET N-CH 50A 60V OPTIMOS3 TO263, RL | 775 |
|
| IPB090N06N3GATMA1 DISTI # IPB090N06N3GATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,60V,50A,71W,PG-TO263-3 | 41 |
|
| IPB090N06N3GATMA1 DISTI # 1775550 | Infineon Technologies AG | MOSFET, N CH, 50A, 60V, PG-TO263-3 | 1790 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: IPB090N06N3 G OMO.#: OMO-IPB090N06N3-G |
MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 |
|
|
Mfr.#: IPB090N06N3GATMA1 OMO.#: OMO-IPB090N06N3GATMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: IPB090N06N3 G OMO.#: OMO-IPB090N06N3-G-1190 |
IPB090N06N3 G |
|
|
Mfr.#: IPB090N06N3G OMO.#: OMO-IPB090N06N3G-1190 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: IPB090N06N3GATMA1 |
MOSFET N-CH 60V 50A TO263-3 |
|
|
Mfr.#: IPB090N06N3GATMA1 , 2SD1 |
全新原裝 |
|
|
Mfr.#: IPB090N06N3GS OMO.#: OMO-IPB090N06N3GS-1190 |
全新原裝 |