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IPB090N06N3 G

IPB090N06N3 G
Mfr. #:
IPB090N06N3 G
製造商:
Infineon Technologies
描述:
IPB090N06N3 G
生命週期:
製造商新產品
數據表:
IPB090N06N3 G 數據表
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IPB090N06N3 G 更多信息
產品屬性
屬性值
Tags
IPB090, IPB09, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型號 製造商 描述 庫存 價格
IPB090N06N3GATMA1
DISTI # V72:2272_06384657		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		473
  • 250:$0.7398
  • 100:$0.7473
  • 25:$0.9646
  • 10:$1.0716
  • 1:$1.2131
IPB090N06N3GATMA1
DISTI # V36:1790_06384657		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$0.3640
  • 500000:$0.3644
  • 100000:$0.4040
  • 10000:$0.4793
  • 1000:$0.4922
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		860In Stock
  • 500:$0.6422
  • 100:$0.7773
  • 10:$0.9970
  • 1:$1.1200
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		860In Stock
  • 500:$0.6422
  • 100:$0.7773
  • 10:$0.9970
  • 1:$1.1200
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.4200
  • 5000:$0.4364
  • 2000:$0.4594
  • 1000:$0.4922
IPB090N06N3 G
DISTI # 30605633		Infineon Technologies AGIPB090N06N3 G
RoHS: Compliant		480
  • 49:$0.5112
IPB090N06N3GATMA1
DISTI # 27089772		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		473
  • 21:$1.2131
IPB090N06N3GATMA1
DISTI # SP000398042		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R (Alt: SP000398042)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 22800
  • 10000:€0.3159
  • 6000:€0.3409
  • 4000:€0.3689
  • 2000:€0.4029
  • 1000:€0.4919
IPB090N06N3 G
DISTI # IPB090N06N3G		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R - Bulk (Alt: IPB090N06N3G)
RoHS: Not Compliant
Min Qty: 807
Container: Bulk		Americas - 0
  • 8070:$0.3929
  • 4035:$0.4009
  • 2421:$0.4139
  • 1614:$0.4299
  • 807:$0.4459
IPB090N06N3GXT
DISTI # IPB090N06N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB090N06N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.3169
  • 6000:$0.3229
  • 4000:$0.3339
  • 2000:$0.3469
  • 1000:$0.3599
IPB090N06N3 G
DISTI # 726-IPB090N06N3G		Infineon Technologies AGMOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant		1019
  • 1:$1.0200
  • 10:$0.8750
  • 100:$0.6720
  • 500:$0.5940
  • 1000:$0.4690
  • 2000:$0.4160
  • 10000:$0.4010
IPB090N06N3GInfineon Technologies AGPower Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		450
  • 1000:$0.4100
  • 500:$0.4300
  • 100:$0.4500
  • 25:$0.4700
  • 1:$0.5000
IPB090N06N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		2000
  • 1000:$0.3200
  • 500:$0.3300
  • 100:$0.3500
  • 25:$0.3600
  • 1:$0.3900
IPB090N06N3GATMA1
DISTI # 8269529P		Infineon Technologies AGMOSFET N-CH 50A 60V OPTIMOS3 TO263, RL775
  • 1000:£0.3370
  • 500:£0.4250
  • 250:£0.4810
  • 50:£0.5540
IPB090N06N3GATMA1
DISTI # IPB090N06N3GATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,50A,71W,PG-TO263-341
  • 1000:$0.4257
  • 100:$0.4572
  • 10:$0.5270
  • 3:$0.6553
  • 1:$0.7615
IPB090N06N3GATMA1
DISTI # 1775550		Infineon Technologies AGMOSFET, N CH, 50A, 60V, PG-TO263-31790
  • 500:£0.4680
  • 250:£0.5360
  • 100:£0.6030
  • 25:£0.7630
  • 5:£0.9400
圖片 型號 描述
IPB090N06N3 G

Mfr.#: IPB090N06N3 G

OMO.#: OMO-IPB090N06N3-G

 MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
IPB090N06N3GATMA1

Mfr.#: IPB090N06N3GATMA1

OMO.#: OMO-IPB090N06N3GATMA1

 MOSFET MV POWER MOS
IPB090N06N3 G

Mfr.#: IPB090N06N3 G

OMO.#: OMO-IPB090N06N3-G-1190

 IPB090N06N3 G
IPB090N06N3G

Mfr.#: IPB090N06N3G

OMO.#: OMO-IPB090N06N3G-1190

 Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB090N06N3GATMA1

Mfr.#: IPB090N06N3GATMA1

OMO.#: OMO-IPB090N06N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 50A TO263-3
IPB090N06N3GATMA1 , 2SD1

Mfr.#: IPB090N06N3GATMA1 , 2SD1

OMO.#: OMO-IPB090N06N3GATMA1-2SD1-1190

 全新原裝
IPB090N06N3GS

Mfr.#: IPB090N06N3GS

OMO.#: OMO-IPB090N06N3GS-1190

 全新原裝
可用性
庫存:
Available
訂購:
2000
輸入數量:
IPB090N06N3 G的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.00
US$0.00
10
US$0.00
US$0.00
100
US$0.00
US$0.00
500
US$0.00
US$0.00
1000
US$0.00
US$0.00
從...開始
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