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FDMS86181

FDMS86181
Mfr. #:
FDMS86181
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 100V/20V N-Chnl Power Trench MOSFET
生命週期:
製造商新產品
數據表:
FDMS86181 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
FDMS86181 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
Power-56-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
124 A
Rds On - 漏源電阻：
12 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
42 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
125 W
配置：
單身的
頻道模式：
增強
商品名：
動力戰壕
打包：
捲軸
高度：
1.1 mm
長度：
6 mm
產品：
功率 MOSFET
系列：
FDMS86181
類型：
動力戰壕
寬度：
5 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
116 S
秋季時間：
6 ns
產品類別：
MOSFET
上升時間：
9 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
25 ns
典型的開啟延遲時間：
17 ns
單位重量：
0.003175 oz
Tags
FDMS8618, FDMS861, FDMS86, FDMS8, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN ON Semiconductor FDMS86181
***Semiconductor
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ
***ure Electronics
N-Channel 100 V 4.2 mOhm 42 nC SMT Shielded Gate PowerTrench Mosfet - Power56
***et
Trans MOSFET N-CH 100V 44A 8-Pin Power56 T/R
***an P&S
N-CH Shielded Gate PowerTrench MOSFET
***et Europe
NM1 100V/20V NCH POWER TRENCH MOSFET
***ical
Trans MOSFET N-CH 100V 44A
***i-Key
MOSFET N-CH 100V POWER56
***ark
Mosfet, N-Ch, 100V, 124A, Power56-8; Transistor Polarity:n Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0033Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 124A, POWER56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Dissipation Pd:125W; Transistor Case Style:Power 56; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:Trench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CANALE N, 100V 124A, POWER56-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:124A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0033ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.1V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:Power 56; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:Trench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
Shielded Gate PowerTrench® MOSFETs
ON Semiconductor Shielded Gate PowerTrench® MOSFETs are 100V N-channel MV MOSFETs developed using an advanced PowerTrench® process that integrates Shielded Gate Technology. These MOSFETs minimize on-state resistance (RDSON) and reverse recovery charge (Qrr) to deliver superior switching performance and efficiency. The small gate charge (QG), small reverse recovery charge (Qrr), and Figure of Merit (FOM) ensure fast switching for synchronous rectification applications. These device have little to no voltage overshoot, reduces voltage ringing, and lowers EMI for applications requiring a 100V-rated MOSFET such as power supplies and motor drives. In addition these MOSFET's increased power density allows wider MOSFET de-rating. These devices are 100% UIL tested and is available in a MSL1 robust package design.Learn More
型號 製造商 描述 庫存 價格
FDMS86181
DISTI # V36:1790_14140389		ON SemiconductorTrans MOSFET N-CH 100V 44A 8-Pin Power 56 EP T/R0
    FDMS86181
    DISTI # V72:2272_14140389    		ON SemiconductorTrans MOSFET N-CH 100V 44A 8-Pin Power 56 EP T/R0
      FDMS86181
      DISTI # FDMS86181TR-ND      		ON SemiconductorMOSFET N-CH 100V 44A POWER56
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		On Order
      • 6000:$1.3696
      • 3000:$1.3867
      FDMS86181
      DISTI # FDMS86181CT-ND      		ON SemiconductorMOSFET N-CH 100V 44A POWER56
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Temporarily Out of Stock
      • 1000:$1.4812
      • 500:$1.7563
      • 100:$2.0632
      • 10:$2.5180
      • 1:$2.8000
      FDMS86181
      DISTI # FDMS86181DKR-ND      		ON SemiconductorMOSFET N-CH 100V 44A POWER56
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Temporarily Out of Stock
      • 1000:$1.4812
      • 500:$1.7563
      • 100:$2.0632
      • 10:$2.5180
      • 1:$2.8000
      FDMS86181
      DISTI # FDMS86181      		ON SemiconductorNM1 100V/20V NCH POWER TRENCH MOSFET - Tape and Reel (Alt: FDMS86181)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 3000:$1.1900
      • 6000:$1.1900
      • 12000:$1.1900
      • 18000:$1.1900
      • 30000:$1.1900
      FDMS86181
      DISTI # 01AC8567      		ON SemiconductorFET 100V 4.2 MOHM PQFN56 / REEL0
      • 5000:$1.2800
      • 2500:$1.3100
      • 1000:$1.6300
      • 500:$1.8100
      • 100:$1.9600
      • 10:$2.4400
      • 1:$2.8700
      FDMS86181
      DISTI # 512-FDMS86181      		ON SemiconductorMOSFET 100V/20V N-Chnl Power Trench MOSFET
      RoHS: Compliant      		0
      • 1:$2.8700
      • 10:$2.4400
      • 100:$1.9500
      • 500:$1.7100
      • 1000:$1.4100
      • 3000:$1.3200
      FDMS86181
      DISTI # 2781483      		ON SemiconductorMOSFET, N-CH, 100V, 124A, POWER56-8
      RoHS: Compliant      		0
      • 1000:$2.3800
      • 500:$2.8200
      • 100:$3.4700
      • 10:$4.2400
      • 1:$4.7400
      FDMS86181
      DISTI # 2781483      		ON SemiconductorMOSFET, N-CH, 100V, 124A, POWER56-80
      • 500:£1.3100
      • 250:£1.4100
      • 100:£1.5000
      • 10:£1.8800
      • 1:£2.4900
      FDMS86181ON Semiconductor 0
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        可用性
        庫存:
        Available
        訂購:
        5000
        輸入數量:
        FDMS86181的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$2.87
        US$2.87
        10
        US$2.44
        US$24.40
        100
        US$1.95
        US$195.00
        500
        US$1.71
        US$855.00
        1000
        US$1.41
        US$1 410.00
        由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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