QPD1009

Mfr. #:: QPD1009
製造商:: Qorvo
描述:: RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN
生命週期:: 製造商新產品
數據表:: QPD1009 數據表
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更多信息:: QPD1009 更多信息

產品屬性
屬性值

製造商: TriQuint (Qorvo)

產品分類: 晶體管 - FET、MOSFET - 單

系列: QPD

打包: 托盤

部分別名: 1132865

安裝方式: 貼片/貼片

工作溫度範圍: - 40 C to + 85 C

包裝盒: QFN-16

技術: 氮化鎵碳化矽

配置: 單身的

晶體管型: HEMT

獲得: 24 dB

輸出功率: 17 W

鈀功耗: 17.5 W

最高工作溫度: + 85 C

最低工作溫度: - 40 C

工作頻率: DC to 4 GHz

Id 連續漏極電流: 700 mA

Vds-漏-源-擊穿電壓: 50 V

晶體管極性: N通道

開發套件: QPD1009-EVB1

VGS-柵極-源極擊穿電壓: - 2.8 V

Tags: QPD100, QPD10, QPD1, QPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD1009 描述

***W: RF Power Transistor, DC- 4.0 GHz, 15 W, 50 V, 3 x 3 mm, GaN

QPD1009 更多信息

QPD1009 & QPD1010 GaN RF Transistors: Qorvo QPD1009 & QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and constructed with Qorvo's proven QGaN25HV process. This process features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization potentially lowers system cost in terms of fewer amplifier line-ups and lower thermal management costs.

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

GaN Transistor Solutions for Sub 6GHz 5G: Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.

Market price

型號	製造商	描述	庫存	價格
QPD1009 DISTI # 772-QPD1009	Qorvo	RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN RoHS: Compliant	171	1:$31.0000 25:$26.8100 100:$23.1900 250:$21.5700
QPD1009-EVB1 DISTI # 772-QPD1009-EVB1	Qorvo	RF Development Tools DC-4GHz 15W 28-50V Eval Board RoHS: Compliant	3	1:$875.0000

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