QPD1013SR

Mfr. #:: QPD1013SR
製造商:: Qorvo
描述:: RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
生命週期:: 製造商新產品
數據表:: QPD1013SR 數據表
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更多信息:: QPD1013SR 更多信息

產品屬性
屬性值

製造商：: 科沃

產品分類：: 射頻 JFET 晶體管

RoHS：: Y

晶體管類型：: HEMT

技術：: 氮化鎵碳化矽

獲得：: 21.8 dB

晶體管極性：: N通道

Id - 連續漏極電流：: 1.7 A

輸出功率：: 178 W

最大漏柵電壓：: 65 V

最低工作溫度：: - 40 C

最高工作溫度：: + 85 C

Pd - 功耗：: 67 W

安裝方式：: 貼片/貼片

包裝/案例：: DFN-6

打包：: 捲軸

應用：: 軍用雷達、干擾器、測試儀器、寬帶或窄帶放大器、陸地移動和軍用

配置：: 單三重排水

工作頻率：: 1.2 GHz to 2.7 GHz

品牌：: 科沃

開發套件：: QPD1013EVB01

濕氣敏感：: 是的

產品類別：: 射頻 JFET 晶體管

出廠包裝數量：: 100

子類別：: 晶體管

Tags: QPD101, QPD10, QPD1, QPD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD1013SR 描述

***et: GaN RF Transistor 2.7GHz 65V 150W 6-Pin QFN T/R

***el Electronic: RF JFET Transistors DC-2.7GHz 150W PAE 64.8%

QPD1013SR 更多信息

QPD1013 GaN RF Transistor: Qorvo QPD1013 GaN RF Transistor is a high power and wide bandwidth High Electron Mobility Transistor (HEMT) which operates from DC to 2.7GHz. This single stage unmatched power transistor is a 150W discrete GaN on SiC device. The QPD1013 RF transistor features an over-molded plastic package and is suitable for numerous applications such as military radar, land mobile, and military radio communications.

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

GaN Transistor Solutions for Sub 6GHz 5G: Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.

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