TGF2929-FL

Mfr. #:: TGF2929-FL
製造商:: Qorvo
描述:: RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
生命週期:: 製造商新產品
數據表:: TGF2929-FL 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: TGF2929-FL 更多信息

產品屬性
屬性值

製造商: TriQuint (Qorvo)

產品分類: 晶體管 - FET、MOSFET - 單

類型: 射頻功率MOSFET

打包: 托盤

部分別名: 1123811

技術: 氮化鎵矽

獲得: 14 dB

輸出功率: 107 W

鈀功耗: 144 W

工作頻率: 3.5 GHz

VGS-柵極-源極-電壓: 145 V

Id 連續漏極電流: 12 A

Vds-漏-源-擊穿電壓: 28 V

VGS-th-Gate-Source-Threshold-Voltage: - 2.9 V

晶體管極性: N通道

Tags: TGF2929-F, TGF292, TGF29, TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2929-FL 描述

***W: RF Power Transistor, DC to 3.5 GHz, 100 W, 14 dB, 28 V, GaN

TGF2929-FL 更多信息

TGF2929 GaN RF Power Transistors: Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

型號	製造商	描述	庫存	價格
TGF2929-FL DISTI # 772-TGF2929-FL	Qorvo	RF MOSFET Transistors DC-3.5GHz 100W 28V GaN RoHS: Compliant	11	1:$375.0000

相關產品

圖片	型號	描述
	Mfr.#: TGF2929-HM OMO.#: OMO-TGF2929-HM	RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
	Mfr.#: TGF2965-SM OMO.#: OMO-TGF2965-SM	RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
	Mfr.#: TGF2933 OMO.#: OMO-TGF2933	RF JFET Transistors DC-25GHz 7Watt NF 1.3dB GaN
	Mfr.#: TGF2941 OMO.#: OMO-TGF2941	RF JFET Transistors DC-25GHz 4Watt NF 1.3dB GaN
	Mfr.#: TGF2929-FS OMO.#: OMO-TGF2929-FS	RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
	Mfr.#: TGF2979-SM OMO.#: OMO-TGF2979-SM-318	RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
	Mfr.#: TGF2960 OMO.#: OMO-TGF2960-1190	全新原裝
	Mfr.#: TGF2960-SD. OMO.#: OMO-TGF2960-SD--1190	全新原裝
	Mfr.#: TGF2961 OMO.#: OMO-TGF2961-1190	全新原裝
	Mfr.#: TGF2961-SD OMO.#: OMO-TGF2961-SD-1190	全新原裝