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| PartNumber | IXTP05N100 | IXTP05N100P | IXTP05N100M |
| Description | MOSFET 0.75 Amps 1000V 15 Rds | MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on) | Darlington Transistors MOSFET 0.5 Amps 1000V |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
| Id Continuous Drain Current | 750 mA | 500 mA | - |
| Rds On Drain Source Resistance | 17 Ohms | 30 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 4.5 V | 4 V | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Qg Gate Charge | 7.8 nC | 8.1 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 40 W | 50 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Height | 16 mm | - | - |
| Length | 10.41 mm | - | - |
| Series | IXTP05N100 | IXTP05N100 | IXTP05N100 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | High Voltage Power MOSFET | - | - |
| Width | 4.83 mm | - | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 0.55 S | - | - |
| Fall Time | 28 ns | 15 ns | 28 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 19 ns | 15 ns | 19 ns |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | 20 ns | 40 ns |
| Typical Turn On Delay Time | 11 ns | 6 ns | 11 ns |
| Unit Weight | 0.081130 oz | 0.012346 oz | 0.012346 oz |
| Product | - | MOSFET | - |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 25 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 700 mA |
| Vds Drain Source Breakdown Voltage | - | - | 1000 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4.5 V |
| Rds On Drain Source Resistance | - | - | 15 Ohms |
| Qg Gate Charge | - | - | 7.8 nC |
| Forward Transconductance Min | - | - | 0.55 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Littelfuse |
IXTP05N100 | MOSFET 0.75 Amps 1000V 15 Rds | |
| IXTP05N100P | MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on) | ||
| IXTP05N100M | Darlington Transistors MOSFET 0.5 Amps 1000V | ||
| IXTP05N100 | IGBT Transistors MOSFET 0.75 Amps 1000V 15 Rds | ||
| IXTP05N100P | MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on) |