FDU6676AS

FDU6676AS
Mfr. #:
FDU6676AS
製造商:
ON Semiconductor
描述:
MOSFET N-CH 30V 90A IPAK
生命週期:
製造商新產品
數據表:
FDU6676AS 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
Tags
FDU6676, FDU667, FDU66, FDU6, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 30V 90A IPAK
***ser
MOSFETs 30V N-Channel PowerTrench SyncFET
***el Nordic
Contact for details
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 30V 86A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:IPAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***ser
MOSFETs- Power and Small Signal NFET 30V 88A 5MOHM
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:88A; On Resistance, Rds(on):5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, 3 I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:88A; Resistance, Rds On:0.005ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:66W; Voltage, Vds Max:30V
***emi
Power MOSFET 24V 80A 5.8 Single N-Channel DPAK
***ser
MOSFETs- Power and Small Signal 24V 80A N-Channel
***r Electronics
Power Field-Effect Transistor, 80A I(D), 24V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***Yang
NFET DPAK 30A 25V 0.006R - Rail/Tube
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:80A; Drain Source Voltage, Vds:24V; On Resistance, Rds(on):5.8mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.9V; Power Dissipation, Pd:75W ;RoHS Compliant: Yes
***emi
Power MOSFET 25V 98A 4.3 mOhm Single N-Channel DPAK
***ponent Stockers USA
14 A 25 V 0.006 ohm N-CHANNEL Si POWER MOSFET
***th Star Micro
Power MOSFET 25V 97A Single N-Channel
***r Electronics
Power Field-Effect Transistor, 14A I(D), 25V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:17.7A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):4.3mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V ;RoHS Compliant: Yes
型號 製造商 描述 庫存 價格
FDU6676AS
DISTI # FDU6676AS-ND
ON SemiconductorMOSFET N-CH 30V 90A IPAK
RoHS: Compliant
Min Qty: 1800
Container: Tube
Limited Supply - Call
    FDU6676AS
    DISTI # 512-FDU6676AS
    ON SemiconductorMOSFET 30V N-Channel PowerTrench SyncFET
    RoHS: Compliant
    0
      FDU6676ASFairchild Semiconductor CorporationPower Field-Effect Transistor, 90A I(D), 30V, 5.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Compliant
      1708
      • 1000:$0.2600
      • 500:$0.2800
      • 100:$0.2900
      • 25:$0.3000
      • 1:$0.3200
      圖片 型號 描述
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      Mfr.#: FDU6612A

      OMO.#: OMO-FDU6612A-ON-SEMICONDUCTOR

      MOSFET N-CH 30V 9.5A I-PAK
      FDU6644

      Mfr.#: FDU6644

      OMO.#: OMO-FDU6644-1190

      Power Field-Effect Transistor, 67A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      FDU6676AS

      Mfr.#: FDU6676AS

      OMO.#: OMO-FDU6676AS-ON-SEMICONDUCTOR

      MOSFET N-CH 30V 90A IPAK
      FDU6676ASNL

      Mfr.#: FDU6676ASNL

      OMO.#: OMO-FDU6676ASNL-1190

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      Mfr.#: FDU6680A(Q)

      OMO.#: OMO-FDU6680A-Q--1190

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      FDU6680FSC

      Mfr.#: FDU6680FSC

      OMO.#: OMO-FDU6680FSC-1190

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      FDU6688-Q

      Mfr.#: FDU6688-Q

      OMO.#: OMO-FDU6688-Q-1190

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      FDU6N50FTU

      Mfr.#: FDU6N50FTU

      OMO.#: OMO-FDU6N50FTU-1190

      全新原裝
      可用性
      庫存:
      Available
      訂購:
      1000
      輸入數量:
      FDU6676AS的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$0.39
      US$0.39
      10
      US$0.37
      US$3.70
      100
      US$0.35
      US$35.10
      500
      US$0.33
      US$165.75
      1000
      US$0.31
      US$312.00
      由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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