OMO ElectronicOMO Electronic
Expand menu
您好，登錄我的帳戶
0 購物車

IPT65R195G7XTMA1

IPT65R195G7XTMA1
Mfr. #:
IPT65R195G7XTMA1
製造商:
Infineon Technologies
描述:
MOSFET
生命週期:
製造商新產品
數據表:
IPT65R195G7XTMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IPT65R195G7XTMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
HSOF-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
650 V
Id - 連續漏極電流：
14 A
Rds On - 漏源電阻：
424 mOhms
Vgs th - 柵源閾值電壓：
3 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
20 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
97 W
配置：
單身的
頻道模式：
增強
商品名：
酷摩
打包：
捲軸
高度：
2.4 mm
長度：
10.58 mm
系列：
CoolMOS G7
晶體管類型：
1 N-Channel
寬度：
10.1 mm
品牌：
英飛凌科技
秋季時間：
9 ns
產品類別：
MOSFET
上升時間：
5 ns
出廠包裝數量：
2000
子類別：
MOSFET
典型關斷延遲時間：
46 ns
典型的開啟延遲時間：
9 ns
第 # 部分別名：
IPT65R195G7 SP001456206
單位重量：
0.027112 oz
Tags
IPT65R1, IPT65, IPT6, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 14A 9-Pin(8+Tab) HSOF T/R
***et
Trans MOSFET N 700V 14A 8-Pin HSOF T/R
***ronik
N-CH 650V 14A 195mOhm HSOF-8
***i-Key
HIGH POWER_NEW
***ark
Mosfet, N-Ch, 650V, 14A, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 14A, HSOF; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:97W; Transistor Case Style:HSOF; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:CoolMOS C7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 650V, 14A, HSOF; Polarità Transistor:Canale N; Corrente Continua di Drain Id:14A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.17ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:97W; Modello Case Transistor:HSOF; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS C7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The CoolMOS C7 Gold series (G7) for the first time brings together the benefits of the improved 650V CoolMOS C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TOLL package to enable an SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW. | Summary of Features: Gives best-in-class FOM R DS(on)*E oss and R DS(on)*Q G; Enables best-in-class R DS(on) in smallest footprint | Benefits: FOM R DS(on)xQ G is 14% better than previous 650V CoolMOS C7 enabling faster switching leading to higher efficiency; Power density trough BIC 33m in 115mm 2 TOLL footprint; Reducing parasitic source inductance by Kelvin source improves efficiency switching and ease-of-use; TOLL package is easy to use and has the highest quality standards; Improved thermals enable SMD TOLL package to be used in higher current designs than has been previously possible | Target Applications: SMPS; Telecom; Server; Solar
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ C7 Gold (G7) Power MOSFETs
Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型號 製造商 描述 庫存 價格
IPT65R195G7XTMA1
DISTI # V72:2272_16141108		Infineon Technologies AGTrans MOSFET N-CH 650V 14A 9-Pin(8+Tab) HSOF T/R
RoHS: Compliant		764
  • 500:$1.8480
  • 250:$2.0600
  • 100:$2.0990
  • 25:$2.4540
  • 10:$2.4580
  • 1:$2.8490
IPT65R195G7XTMA1
DISTI # V36:1790_16141108		Infineon Technologies AGTrans MOSFET N-CH 650V 14A 9-Pin(8+Tab) HSOF T/R
RoHS: Compliant		0
    IPT65R195G7XTMA1
    DISTI # IPT65R195G7XTMA1CT-ND    		Infineon Technologies AGHIGH POWER_NEW
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		1916In Stock
    • 1000:$1.8519
    • 500:$2.1958
    • 100:$2.7117
    • 10:$3.3070
    • 1:$3.7000
    IPT65R195G7XTMA1
    DISTI # IPT65R195G7XTMA1DKR-ND    		Infineon Technologies AGHIGH POWER_NEW
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		1916In Stock
    • 1000:$1.8519
    • 500:$2.1958
    • 100:$2.7117
    • 10:$3.3070
    • 1:$3.7000
    IPT65R195G7XTMA1
    DISTI # IPT65R195G7XTMA1TR-ND    		Infineon Technologies AGHIGH POWER_NEW
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 2000:$1.7081
    IPT65R195G7XTMA1
    DISTI # 30283193    		Infineon Technologies AGTrans MOSFET N-CH 650V 14A 9-Pin(8+Tab) HSOF T/R
    RoHS: Compliant    		2000
    • 4000:$1.4304
    • 2000:$1.4880
    IPT65R195G7XTMA1
    DISTI # 26196667    		Infineon Technologies AGTrans MOSFET N-CH 650V 14A 9-Pin(8+Tab) HSOF T/R
    RoHS: Compliant    		764
    • 500:$1.9866
    • 250:$2.2145
    • 100:$2.2564
    • 25:$2.6380
    • 10:$2.6423
    • 5:$3.0627
    IPT65R195G7XTMA1
    DISTI # SP001456206    		Infineon Technologies AGTrans MOSFET N 700V 14A 8-Pin HSOF T/R (Alt: SP001456206)
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape and Reel    		Europe - 2000
    • 2000:€2.4900
    • 4000:€1.8900
    • 8000:€1.5900
    • 12000:€1.4900
    • 20000:€1.3900
    IPT65R195G7XTMA1
    DISTI # IPT65R195G7XTMA1    		Infineon Technologies AGTrans MOSFET N 700V 14A 8-Pin HSOF T/R - Bulk (Alt: IPT65R195G7XTMA1)
    Min Qty: 207
    Container: Bulk    		Americas - 0
    • 207:$1.4900
    • 209:$1.3900
    • 416:$1.3900
    • 1035:$1.2900
    • 2070:$1.2900
    IPT65R195G7XTMA1
    DISTI # IPT65R195G7XTMA1    		Infineon Technologies AGTrans MOSFET N 700V 14A 8-Pin HSOF T/R - Tape and Reel (Alt: IPT65R195G7XTMA1)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel    		Americas - 0
    • 2000:$1.5900
    • 4000:$1.5900
    • 8000:$1.4900
    • 12000:$1.4900
    • 20000:$1.3900
    IPT65R195G7XTMA1
    DISTI # 49AC0305    		Infineon Technologies AGMOSFET, N-CH, 650V, 14A, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.17ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power Dissipation RoHS Compliant: Yes2374
    • 1000:$1.6300
    • 500:$1.9300
    • 250:$2.1600
    • 100:$2.2700
    • 50:$2.3900
    • 25:$2.5000
    • 10:$2.6200
    • 1:$3.0900
    IPT65R195G7XTMA1
    DISTI # 726-IPT65R195G7XTMA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		2046
    • 1:$3.0900
    • 10:$2.6200
    • 100:$2.2700
    • 250:$2.1600
    • 500:$1.9300
    • 1000:$1.6300
    • 2000:$1.5500
    • 4000:$1.4900
    IPT65R195G7XTMA1Infineon Technologies AGPower Field-Effect Transistor
    RoHS: Not Compliant    		2000
    • 1000:$1.4100
    • 500:$1.4800
    • 100:$1.5400
    • 25:$1.6100
    • 1:$1.7300
    IPT65R195G7XTMA1
    DISTI # 2839473    		Infineon Technologies AGMOSFET, N-CH, 650V, 14A, HSOF
    RoHS: Compliant    		2374
    • 1000:$2.4900
    • 500:$2.6200
    • 250:$2.7600
    • 100:$2.9200
    • 10:$3.3000
    • 1:$3.5300
    IPT65R195G7XTMA1
    DISTI # 2839473    		Infineon Technologies AGMOSFET, N-CH, 650V, 14A, HSOF
    RoHS: Compliant    		2384
    • 500:£1.5100
    • 250:£1.6800
    • 100:£1.7600
    • 10:£2.0400
    • 1:£2.7100
    IPT65R195G7XTMA1
    DISTI # XSKDRABV0021274    		Infineon Technologies AG 
    RoHS: Compliant    		6000 in Stock0 on Order
    • 6000:$2.4360
    • 2000:$2.6040
    圖片 型號 描述
    MMSZ5245BT1G

    Mfr.#: MMSZ5245BT1G

    OMO.#: OMO-MMSZ5245BT1G

    		 Zener Diodes 15V 500mW
    IGT60R190D1SATMA1

    Mfr.#: IGT60R190D1SATMA1

    OMO.#: OMO-IGT60R190D1SATMA1

    		 MOSFET 600V CoolGaN Power Transistor
    IPT65R105G7XTMA1

    Mfr.#: IPT65R105G7XTMA1

    OMO.#: OMO-IPT65R105G7XTMA1

    		 MOSFET
    IPB033N10N5LFATMA1

    Mfr.#: IPB033N10N5LFATMA1

    OMO.#: OMO-IPB033N10N5LFATMA1

    		 MOSFET DIFFERENTIATED MOSFETS
    GS61004B-E01-MR

    Mfr.#: GS61004B-E01-MR

    OMO.#: OMO-GS61004B-E01-MR

    		 MOSFET 100V 45A E-Mode GaN
    BSC100N10NSF G

    Mfr.#: BSC100N10NSF G

    OMO.#: OMO-BSC100N10NSF-G

    		 MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
    UCC28951PWR

    Mfr.#: UCC28951PWR

    OMO.#: OMO-UCC28951PWR

    		 Switching Controllers GREEN PHASE-SHIFTED FULL-BRIDGE CONTROLL
    B66398A2000X

    Mfr.#: B66398A2000X

    OMO.#: OMO-B66398A2000X-1161

    		 EMI/RFI Suppressors & Ferrites Ferrite Cores & Accessories YOKE ETD59
    IPB033N10N5LFATMA1

    Mfr.#: IPB033N10N5LFATMA1

    OMO.#: OMO-IPB033N10N5LFATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V D2PAK-3
    IGT60R190D1SATMA1

    Mfr.#: IGT60R190D1SATMA1

    OMO.#: OMO-IGT60R190D1SATMA1-INFINEON-TECHNOLOGIES

    		 IC GAN FET 600V 23A 8HSOF
    可用性
    庫存:
    Available
    訂購:
    1985
    輸入數量:
    IPT65R195G7XTMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$3.09
    US$3.09
    10
    US$2.62
    US$26.20
    100
    US$2.27
    US$227.00
    250
    US$2.16
    US$540.00
    500
    US$1.93
    US$965.00
    1000
    US$1.63
    US$1 630.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
    從...開始
    最新產品
    More Newest Products
    Top