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IGT60R190D1SATMA1

IGT60R190D1SATMA1
Mfr. #:
IGT60R190D1SATMA1
製造商:
Infineon Technologies
描述:
MOSFET 600V CoolGaN Power Transistor
生命週期:
製造商新產品
數據表:
IGT60R190D1SATMA1 數據表
交貨:
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ECAD Model:
更多信息:
IGT60R190D1SATMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
氮化鎵
安裝方式：
貼片/貼片
包裝/案例：
PG-HSOF-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
12.5 A
Rds On - 漏源電阻：
190 mOhms
Vgs th - 柵源閾值電壓：
0.9 V
Vgs - 柵源電壓：
10 V
Qg - 門電荷：
3.2 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
55.5 W
配置：
單身的
頻道模式：
增強
商品名：
冷卻氮化鎵
打包：
捲軸
晶體管類型：
1 N-Channel
品牌：
英飛凌科技
秋季時間：
12 ns
產品類別：
MOSFET
上升時間：
5 ns
出廠包裝數量：
2000
子類別：
MOSFET
典型關斷延遲時間：
12 ns
典型的開啟延遲時間：
11 ns
第 # 部分別名：
SP001701702
Tags
IGT60, IGT6, IGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
型號 製造商 描述 庫存 價格
IGT60R190D1SATMA1
DISTI # V72:2272_22710693		Infineon Technologies AGIGT60R190D1SATMA14055
  • 3000:$8.2850
  • 1000:$8.6090
  • 500:$8.9330
  • 250:$9.2560
  • 100:$10.1350
  • 25:$11.4900
  • 10:$11.8430
  • 1:$13.0200
IGT60R190D1SATMA1
DISTI # V36:1790_22710693		Infineon Technologies AGIGT60R190D1SATMA10
  • 2000000:$7.2580
  • 1000000:$7.2610
  • 200000:$7.6100
  • 20000:$8.2630
  • 2000:$8.3740
IGT60R190D1SATMA1
DISTI # IGT60R190D1SATMA1CT-ND		Infineon Technologies AGIC GAN FET 600V 23A 8HSOF
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		510In Stock
  • 1000:$8.9618
  • 500:$9.7704
  • 100:$10.9832
  • 10:$13.0050
  • 1:$14.1500
IGT60R190D1SATMA1
DISTI # IGT60R190D1SATMA1DKR-ND		Infineon Technologies AGIC GAN FET 600V 23A 8HSOF
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		510In Stock
  • 1000:$8.9618
  • 500:$9.7704
  • 100:$10.9832
  • 10:$13.0050
  • 1:$14.1500
IGT60R190D1SATMA1
DISTI # IGT60R190D1SATMA1TR-ND		Infineon Technologies AGIC GAN FET 600V 23A 8HSOF
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$8.3737
IGT60R190D1SATMA1
DISTI # 32361396		Infineon Technologies AGIGT60R190D1SATMA14055
  • 3000:$8.2850
  • 1000:$8.6090
  • 500:$8.9330
  • 250:$9.2560
  • 100:$10.1350
  • 25:$11.4900
  • 10:$11.8430
  • 1:$13.0200
IGT60R190D1SATMA1
DISTI # SP001701702		Infineon Technologies AGGAN HV (Alt: SP001701702)
RoHS: Compliant
Min Qty: 2000		Europe - 100
  • 20000:€6.8900
  • 12000:€7.3900
  • 8000:€7.8900
  • 4000:€8.2900
  • 2000:€8.5900
IGT60R190D1SATMA1
DISTI # IGT60R190D1SATMA1		Infineon Technologies AGGAN HV - Tape and Reel (Alt: IGT60R190D1SATMA1)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$7.8900
  • 12000:$7.9900
  • 8000:$8.2900
  • 4000:$8.5900
  • 2000:$8.8900
IGT60R190D1SATMA1
DISTI # 84AC1772		Infineon Technologies AGMOSFET, N-CH, 600V, 12.5A, 55.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:12.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes2158
  • 1000:$8.3700
  • 500:$9.1300
  • 250:$9.7600
  • 100:$10.2600
  • 50:$10.9500
  • 25:$11.6500
  • 10:$12.1500
  • 1:$13.2100
IGT60R190D1SATMA1
DISTI # 726-IGT60R190D1SATMA		Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
RoHS: Compliant		2156
  • 1:$13.0800
  • 10:$12.0300
  • 25:$11.5300
  • 100:$10.1600
  • 250:$9.6600
  • 500:$9.0400
  • 1000:$8.2900
  • 2000:$7.4800
IGT60R190D1SATMA1
DISTI # IGT60R190D1SATMA1		Infineon Technologies AGTransistor: N-JFET,CoolGaN™,unipolar,600V,12.5A,Idm:23A,55.5W7
  • 10:$12.2900
  • 3:$13.8700
  • 1:$15.4400
IGT60R190D1SATMA1
DISTI # 2981534		Infineon Technologies AGMOSFET, N-CH, 600V, 12.5A, 55.5W658
  • 100:£7.3600
  • 50:£7.8600
  • 10:£8.3600
  • 5:£9.4800
  • 1:£9.9600
IGT60R190D1SATMA1
DISTI # 2981534		Infineon Technologies AGMOSFET, N-CH, 600V, 12.5A, 55.5W
RoHS: Compliant		658
  • 250:$12.4700
  • 100:$14.7600
  • 50:$15.9000
  • 10:$16.9800
  • 5:$19.2200
  • 1:$21.0400
圖片 型號 描述
IGT60R070D1ATMA1

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IGO60R070D1AUMA1

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IGOT60R070D1AUMA1

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1EDS5663HXUMA1

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可用性
庫存:
Available
訂購:
1985
輸入數量:
IGT60R190D1SATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$13.08
US$13.08
10
US$12.03
US$120.30
25
US$11.53
US$288.25
100
US$10.16
US$1 016.00
250
US$9.66
US$2 415.00
500
US$9.04
US$4 520.00
1000
US$8.29
US$8 290.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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