NE3515S02-T1C-A

NE3515S02-T1C-A
Mfr. #:
NE3515S02-T1C-A
製造商:
CEL
描述:
RF JFET Transistors Super Low Noise Pseudomorphic
生命週期:
製造商新產品
數據表:
NE3515S02-T1C-A 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商
瑞薩電子
產品分類
射頻場效應管
打包
捲軸
安裝方式
貼片/貼片
包裝盒
S0-2
技術
砷化鎵
晶體管型
pHEMT
獲得
12.5 dB
鈀功耗
165 mW
最高工作溫度
+ 125 C
工作頻率
12 GHz
Id 連續漏極電流
88 mA
Vds-漏-源-擊穿電壓
4 V
正向跨導最小值
70 mS
VGS-柵極-源極擊穿電壓
- 3 V
NF-噪聲係數
0.3 dB
P1dB-壓縮點
14 dBm
Tags
NE3515, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans FET N-CH 4V 88mA 4-Pin Case S-02 T/R
***i-Key
FET RF HFET 12GHZ 2V 10MA S02
型號 製造商 描述 庫存 價格
NE3515S02-T1C-A
DISTI # NE3515S02-T1C-ATR-ND
California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Limited Supply - Call
    NE3515S02-T1C-A
    DISTI # NE3515S02-T1C-ACT-ND
    California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      NE3515S02-T1C-A
      DISTI # NE3515S02-T1C-ADKR-ND
      California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        NE3515S02-T1C-A
        DISTI # 551-NE3515S02-T1C-A
        California Eastern Laboratories (CEL)RF JFET Transistors Super Low Noise Pseudomorphic
        RoHS: Compliant
        0
          NE3515S02-T1C-ARenesas Electronics Corporation 
          RoHS: Not Compliant
          7790
          • 1000:$0.6600
          • 500:$0.6900
          • 100:$0.7200
          • 25:$0.7500
          • 1:$0.8100
          圖片 型號 描述
          NE3515S02-T1C-A

          Mfr.#: NE3515S02-T1C-A

          OMO.#: OMO-NE3515S02-T1C-A

          RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02-A

          Mfr.#: NE3515S02-A

          OMO.#: OMO-NE3515S02-A

          RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
          NE3515S02-T1D-A

          Mfr.#: NE3515S02-T1D-A

          OMO.#: OMO-NE3515S02-T1D-A

          RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02-T1D-A

          Mfr.#: NE3515S02-T1D-A

          OMO.#: OMO-NE3515S02-T1D-A-CEL

          RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02-A

          Mfr.#: NE3515S02-A

          OMO.#: OMO-NE3515S02-A-CEL

          RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
          NE3515S02-T1C-A

          Mfr.#: NE3515S02-T1C-A

          OMO.#: OMO-NE3515S02-T1C-A-CEL

          RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02

          Mfr.#: NE3515S02

          OMO.#: OMO-NE3515S02-1190

          全新原裝
          可用性
          庫存:
          Available
          訂購:
          5000
          輸入數量:
          NE3515S02-T1C-A的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
          參考價格(美元)
          數量
          單價
          小計金額
          1
          US$0.00
          US$0.00
          10
          US$0.00
          US$0.00
          100
          US$0.00
          US$0.00
          500
          US$0.00
          US$0.00
          1000
          US$0.00
          US$0.00
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