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IPB020N04N G

IPB020N04N G
Mfr. #:
IPB020N04N G
製造商:
Infineon Technologies
描述:
Darlington Transistors MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3
生命週期:
製造商新產品
數據表:
IPB020N04N G 數據表
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IPB020N04N G 更多信息
產品屬性
屬性值
製造商
英飛凌科技
產品分類
晶體管 - FET、MOSFET - 單
系列
OptiMOS 3
打包
捲軸
部分別名
IPB020N04NGATMA1 IPB020N04NGXT SP000359157
單位重量
0.056438 oz
安裝方式
貼片/貼片
商品名
優化MOS
包裝盒
TO-263-7
技術
矽
通道數
1 Channel
配置
單昆特源
晶體管型
1 N-Channel
鈀功耗
167 W
最高工作溫度
+ 175 C
最低工作溫度
- 55 C
秋季時間
7.8 ns
上升時間
6.4 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
140 A
Vds-漏-源-擊穿電壓
40 V
Rds-On-Drain-Source-Resistance
2 mOhms
晶體管極性
N通道
典型關斷延遲時間
40 ns
典型開啟延遲時間
27 ns
通道模式
增強
Tags
IPB020N04NG, IPB020N04, IPB020N0, IPB020, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型號 製造商 描述 庫存 價格
IPB020N04NGATMA1
DISTI # V72:2272_06383286		Infineon Technologies AGTrans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		3890
  • 3000:$1.4473
  • 1000:$1.4625
  • 500:$1.4780
  • 250:$1.8223
  • 100:$1.8428
  • 25:$2.1990
  • 10:$2.2253
  • 1:$2.4270
IPB020N04NGATMA1
DISTI # IPB020N04NGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 140A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		155In Stock
  • 500:$1.6247
  • 100:$2.0889
  • 10:$2.5990
  • 1:$2.8800
IPB020N04NGATMA1
DISTI # IPB020N04NGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 140A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		155In Stock
  • 500:$1.6247
  • 100:$2.0889
  • 10:$2.5990
  • 1:$2.8800
IPB020N04NGATMA1
DISTI # IPB020N04NGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 140A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$1.3069
IPB020N04NGATMA1
DISTI # 29552848		Infineon Technologies AGTrans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		3890
  • 3000:$1.4473
  • 1000:$1.4625
  • 500:$1.4780
  • 250:$1.8223
  • 100:$1.8428
  • 25:$2.1990
  • 10:$2.2253
  • 6:$2.4270
IPB020N04NGATMA1
DISTI # IPB020N04NGATMA1		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPB020N04NGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.1799
  • 2000:$1.1379
  • 4000:$1.0959
  • 6000:$1.0599
  • 10000:$1.0409
IPB020N04NGATMA1
DISTI # SP000359157		Infineon Technologies AGMV POWER MOS (Alt: SP000359157)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€1.4849
  • 2000:€1.1539
  • 4000:€1.0709
  • 6000:€1.0379
  • 10000:€0.9969
IPB020N04N G
DISTI # 726-IPB020N04NG		Infineon Technologies AGMOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3
RoHS: Compliant		0
  • 1:$2.4200
  • 10:$2.0500
  • 100:$1.6400
  • 500:$1.4400
  • 1000:$1.1900
IPB020N04NGATMA1Infineon Technologies AGPower Field-Effect Transistor, 140A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
RoHS: Compliant		35852
  • 1000:$0.9900
  • 500:$1.0400
  • 100:$1.0800
  • 25:$1.1300
  • 1:$1.2200
IPB020N04NGATMA1
DISTI # 8977377P		Infineon Technologies AGMOSFET N-CHANNEL 40V 140A OPTIMOS TO263, RL275
  • 50:£1.4820
  • 250:£1.1840
  • 500:£1.0400
  • 1250:£0.8680
IPB020N04NGATMA1
DISTI # C1S322000652273		Infineon Technologies AGTrans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		3890
  • 250:$1.8223
  • 100:$1.8428
  • 25:$2.1990
  • 10:$2.2253
  • 1:$2.4270
圖片 型號 描述
IPB020N10N5ATMA1

Mfr.#: IPB020N10N5ATMA1

OMO.#: OMO-IPB020N10N5ATMA1

 MOSFET N-Ch 100V 120A D2PAK-2
IPB020N10N5LFATMA1

Mfr.#: IPB020N10N5LFATMA1

OMO.#: OMO-IPB020N10N5LFATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V D2PAK-3
IPB020N08N5ATMA1-CUT TAPE

Mfr.#: IPB020N08N5ATMA1-CUT TAPE

OMO.#: OMO-IPB020N08N5ATMA1-CUT-TAPE-1190

 全新原裝
IPB020N04NG

Mfr.#: IPB020N04NG

OMO.#: OMO-IPB020N04NG-1190

 全新原裝
IPB020N08N5

Mfr.#: IPB020N08N5

OMO.#: OMO-IPB020N08N5-1190

 N-CH 80V 120A 2mOhm TO263-3
IPB020N10N5

Mfr.#: IPB020N10N5

OMO.#: OMO-IPB020N10N5-1190

 Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) TO-263
IPB020NE7N3G

Mfr.#: IPB020NE7N3G

OMO.#: OMO-IPB020NE7N3G-1190

 Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB020NE7N3G(020NE7N)

Mfr.#: IPB020NE7N3G(020NE7N)

OMO.#: OMO-IPB020NE7N3G-020NE7N--1190

 全新原裝
IPB020NE7N3GATMA1

Mfr.#: IPB020NE7N3GATMA1

OMO.#: OMO-IPB020NE7N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 75V 120A TO263-3
IPB020N10N5ATMA1

Mfr.#: IPB020N10N5ATMA1

OMO.#: OMO-IPB020N10N5ATMA1-INFINEON-TECHNOLOGIES

 IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2
可用性
庫存:
Available
訂購:
1000
輸入數量:
IPB020N04N G的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.78
US$1.78
10
US$1.70
US$16.96
100
US$1.61
US$160.65
500
US$1.52
US$758.65
1000
US$1.43
US$1 428.00
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