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FCPF190N60-F152

FCPF190N60-F152
Mfr. #:
FCPF190N60-F152
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 600V, 20.2A, 199mOhm SuperFET II MOSFET
生命週期:
製造商新產品
數據表:
FCPF190N60-F152 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
FCPF190N60-F152 DatasheetFCPF190N60-F152 Datasheet (P4-P6)FCPF190N60-F152 Datasheet (P7-P9)
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
20.2 A
Rds On - 漏源電阻：
199 mOhms
Vgs th - 柵源閾值電壓：
3.5 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
57 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
39 W
配置：
單身的
頻道模式：
增強
打包：
管子
高度：
16.3 mm
長度：
10.67 mm
晶體管類型：
1 N-Channel
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
21 S
秋季時間：
5 ns
產品類別：
MOSFET
上升時間：
10 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
64 ns
典型的開啟延遲時間：
20 ns
第 # 部分別名：
FCPF190N60_F152
單位重量：
0.090478 oz
Tags
FCPF190N60-F, FCPF190N60, FCPF19, FCPF1, FCPF, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel SuperFET® II MOSFET 600V, 20.2A, 199mΩ
***ical
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***el Electronic
Chip Resistor - Surface Mount 100 k Ω 0201 (0603 Metric) ±1% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RESISTOR, 0201, 0.05W, 1%, 100K
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 22 A, 170 mΩ, TO-220
***Yang
Trans MOSFET N-CH 600V 22A 3-Pin TO-220 Tube - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 22A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 16 A, 199 mΩ, TO-220F
***et
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220F Rail
*** Stop Electro
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 600V, 16A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:35.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Pulse Current Idm:48A
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220F
***ical
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Rail
***r Electronics
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220F; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.19ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-220F; Current, Idm pulse:60A; Energy, avalanche repetitive Ear:20.8mJ; Pin configuration:1(G), 2(D), 3(S); Power, Pd:39W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Rds measurement:10V; Voltage, Vds max:600V; Voltage, Vgs max:5V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP
*** Source Electronics
MOSFET N-CH 600V 17A TO-220FP / Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N CH, 600V, 17A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ure Electronics
Single N-Channel 600 V 160 mOhm 44 nC CoolMOS™ Power Mosfet - TO-220-3FP
***et
CoolMOS P6 Power Transistor N-Channel 600V 68A 3-Pin TO-220FP
***ow.cn
Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220FP Tube
***et Japan
Trans MOSFET N-CH 600(Min)V 10.4A 3-Pin TO-220 FP Tube
***ark
MOSFET, N-CH, 600V, 23.8A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:23.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***icroelectronics
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-220 package
***ical
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB Tube
***el Electronic
Dual-Output, 2-A/1-A Low Dropout Voltage Regulators with Integrated SVS 24-HTSSOP -40 to 125
***ure Electronics
Single N-Channel 650 V 0.15 O 190 W Flange Mount Power Mosfet - TO-220-3
***ark
MOSFET, N-CH, 600V, 22A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
型號 製造商 描述 庫存 價格
FCPF190N60-F152
DISTI # 32400928		ON SemiconductorSF2 600V 190MOHM F TO220F7000
  • 1000:$1.3680
FCPF190N60-F152
DISTI # FCPF190N60-F152-ND		ON SemiconductorMOSFET N-CH 600V 20.2A TO-220F
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.3680
FCPF190N60-F152
DISTI # V36:1790_06359294		ON SemiconductorSF2 600V 190MOHM F TO220F0
  • 1000000:$1.0890
  • 500000:$1.0910
  • 100000:$1.1900
  • 10000:$1.3430
  • 1000:$1.3680
FCPF190N60_F152
DISTI # FCPF190N60-F152		ON SemiconductorTrans MOSFET N-CH 600V 20.2A 3-Pin TO-220F Tube - Rail/Tube (Alt: FCPF190N60-F152)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.0900
  • 2000:$1.0900
  • 4000:$1.0900
  • 6000:$1.0900
  • 10000:$1.0900
FCPF190N60_F152
DISTI # FCPF190N60F152		ON SemiconductorTrans MOSFET N-CH 600V 20.2A 3-Pin TO-220F Tube - Bulk (Alt: FCPF190N60F152)
Min Qty: 1
Container: Bulk		Americas - 0
    FCPF190N60-F152
    DISTI # 48AC0853    		ON SemiconductorSF2 600V 190MOHM F TO220F / TUBE0
    • 1000:$1.7100
    • 500:$1.8100
    • 250:$1.9400
    • 100:$2.1200
    • 1:$2.5600
    FCPF190N60-F152
    DISTI # 512-FCPF190N60_F152    		ON SemiconductorMOSFET 600V, 20.2A, 199mOhm SuperFET II MOSFET
    RoHS: Compliant    		984
    • 1:$2.6400
    • 10:$2.2400
    • 100:$1.7900
    • 500:$1.5700
    • 1000:$1.3000
    • 2000:$1.2100
    • 5000:$1.1600
    圖片 型號 描述
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    SIHA22N60AEL-GE3

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    STFU24N60M2

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    OMO.#: OMO-STFU24N60M2

    		 MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package
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    STF28N65M2

    Mfr.#: STF28N65M2

    OMO.#: OMO-STF28N65M2

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    STF24N60M2

    Mfr.#: STF24N60M2

    OMO.#: OMO-STF24N60M2

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    STP65NF06

    Mfr.#: STP65NF06

    OMO.#: OMO-STP65NF06

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    STF28N65M2

    Mfr.#: STF28N65M2

    OMO.#: OMO-STF28N65M2-STMICROELECTRONICS

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    SIHA22N60AEL-GE3

    Mfr.#: SIHA22N60AEL-GE3

    OMO.#: OMO-SIHA22N60AEL-GE3-VISHAY

    		 MOSFET N-CHAN 600V
    可用性
    庫存:
    984
    訂購:
    2967
    輸入數量:
    FCPF190N60-F152的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$2.64
    US$2.64
    10
    US$2.24
    US$22.40
    100
    US$1.79
    US$179.00
    500
    US$1.57
    US$785.00
    1000
    US$1.30
    US$1 300.00
    2000
    US$1.21
    US$2 420.00
    5000
    US$1.16
    US$5 800.00
    10000
    US$1.12
    US$11 200.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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