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IGW30N65L5XKSA1

IGW30N65L5XKSA1
Mfr. #:
IGW30N65L5XKSA1
製造商:
Infineon Technologies
描述:
IGBT Transistors 650V IGBT Trenchstop 5
生命週期:
製造商新產品
數據表:
IGW30N65L5XKSA1 數據表
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HTML Datasheet:
IGW30N65L5XKSA1 Datasheet
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更多信息:
IGW30N65L5XKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
650 V
集電極-發射極飽和電壓：
1.05 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
85 A
Pd - 功耗：
227 W
最低工作溫度：
- 40 C
最高工作溫度：
+ 175 C
系列：
TRENCHSTOP 5 L5
打包：
管子
品牌：
英飛凌科技
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
240
子類別：
IGBT
商品名：
戰壕
第 # 部分別名：
IGW30N65L5 SP001174472
單位重量：
0.213580 oz
Tags
IGW30N6, IGW30N, IGW3, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
650V, 30A, TO-247-3 Low VCE(sat) IGBT in TRENCHSTOP 5 technology
***ineon SCT
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz, PG-TO247-3, RoHS
***ark
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs
Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.
型號 製造商 描述 庫存 價格
IGW30N65L5XKSA1
DISTI # IGW30N65L5XKSA1IN-ND		Infineon Technologies AGIGBT 650V 30A TRENCHSTOP TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1200:$2.7254
  • 720:$3.1736
  • 240:$3.6735
  • 10:$4.4150
  • 1:$4.8800
IGW30N65L5XKSA1
DISTI # SP001174472		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube (Alt: SP001174472)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 240
  • 1:€2.2900
  • 10:€2.0900
  • 25:€1.9900
  • 50:€1.8900
  • 100:€1.8900
  • 500:€1.7900
  • 1000:€1.6900
IGW30N65L5XKSA1
DISTI # IGW30N65L5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW30N65L5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$2.2900
  • 480:$2.1900
  • 960:$2.0900
  • 1440:$2.0900
  • 2400:$1.9900
IGW30N65L5XKSA1
DISTI # 12AC9665		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247,DC Collector Current:85A,Collector Emitter Saturation Voltage Vce(on):1.05V,Power Dissipation Pd:227W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes1192
  • 500:$3.1500
  • 250:$3.4700
  • 100:$3.6400
  • 50:$3.8100
  • 25:$3.9800
  • 10:$4.1500
  • 1:$4.8100
IGW30N65L5XKSA1
DISTI # 726-IGW30N65L5XKSA1		Infineon Technologies AGIGBT Transistors 650V IGBT Trenchstop 5
RoHS: Compliant		0
  • 1:$4.3400
  • 10:$3.6900
  • 100:$3.2000
  • 250:$3.0300
  • 500:$2.7200
IGW30N65L5XKSA1
DISTI # XSKDRABS0023696		Infineon Technologies AG 
RoHS: Compliant		720
  • 720:$2.7800
  • 240:$2.9800
IGW30N65L5XKSA1
DISTI # 2709992		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant		1190
  • 100:£2.9400
  • 10:£3.3800
  • 1:£3.9800
IGW30N65L5XKSA1
DISTI # 2709992		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant		1192
  • 1200:$3.8500
  • 720:$4.5700
  • 240:$5.3600
  • 10:$6.5400
  • 1:$7.2900
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可用性
庫存:
Available
訂購:
1984
輸入數量:
IGW30N65L5XKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$4.34
US$4.34
10
US$3.69
US$36.90
100
US$3.20
US$320.00
250
US$3.03
US$757.50
500
US$2.72
US$1 360.00
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