BSD214SNL6327

Mfr. #:: BSD214SNL6327
製造商:: Rochester Electronics, LLC
描述:: Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
生命週期:: 製造商新產品
數據表:: BSD214SNL6327 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

製造商: 英飛凌

產品分類: FET - 單

Tags: BSD214S, BSD214, BSD21, BSD2, BSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSD214SNL6327 描述

***et: Trans MOSFET N-CH 20V 1.5A 6-Pin SOT-363 T/R

***ponent Stockers USA: 1500 mA 20 V N-CHANNEL Si SMALL SIGNAL MOSFET

***i-Key: SMALL SIGNAL N-CHANNEL MOSFET

***p One Stop Global: Trans MOSFET N/P-CH 20V 0.95A/0.53A Automotive 6-Pin SOT-363 T/R

***ponent Stockers USA: 950 mA 20 V 2 CHANNEL N AND P-CHANNEL Si SMALL SIGNAL MOSFET

***el Electronic: CAP CER 3PF 25V C0G/NP0 01005

***S: new, original packaged

***el Nordic: Contact for details

***ical: Trans MOSFET P-CH 30V 1.5A Automotive 6-Pin SOT-363 T/R

*** Electronic Components: MOSFET P-CH 30V 1.5A SOT363

***el Electronic: CAP CER 3.1PF 25V C0G/NP0 01005

***i-Key: P-CHANNEL MOSFET

***el Nordic: Contact for details

***p One Stop Global: Trans MOSFET P-CH 20V 0.39A Automotive 6-Pin SOT-363 T/R

***ponent Stockers USA: 390 mA 20 V 2 CHANNEL P-CHANNEL Si SMALL SIGNAL MOSFET

***i-Key: MOSFET 2P-CH 20V 0.39A SOT363

***el Electronic: CAP CER 3PF 25V C0G/NP0 01005

***el Nordic: Contact for details

***et Japan: Transistor MOSFET Array Dual N-CH 60V 0.3A 6-Pin SOT-363 T/R

***ure Electronics: Dual N-Channel 60 V 3 Ohm 0.4 nC OptiMOS Small Signal Mosfet - SOT-363

***ment14 APAC: N CH MOSFET, 60V, 115mA, SOT-363; Transi; N CH MOSFET, 60V, 115mA, SOT-363; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:115mA; Drain Source Voltage Vds, N Channel:60V; On Resistance Rds(on), N Channel:1.6ohm; Rds(on) Test Voltage Vgs:5V

***th Star Micro: N-Channel Enhancement Mode Field Effect Transistor Product Highlights: Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***trelec: Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 3.3 / Turn-OFF Delay Time ns = 5.5 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) mW = 500

***emi: Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω

***et: Transistor MOSFET Array Dual N-CH 60V 300mA 6-Pin SC-88 T/R

***ark: Mosfet, Aec-Q101, Dual N-Ch, 60V, Sot-363; Channel Type:n Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:60V; Continuous Drain Current Id N Channel:295Ma; No. Of Pins:6Pins; Product Range:- Rohs Compliant: Yes

***nell: MOSFET, AUTO, DUAL N-CH, 60V, SOT-363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 295mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 250mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Market price

型號	製造商	描述	庫存	價格
BSD214SN L6327 DISTI # BSD214SNL6327INTR-ND	Infineon Technologies AG	MOSFET N-CH 20V 1.5A SOT-363 Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
BSD214SN L6327 DISTI # BSD214SNL6327INCT-ND	Infineon Technologies AG	MOSFET N-CH 20V 1.5A SOT-363 Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
BSD214SN L6327 DISTI # BSD214SNL6327INDKR-ND	Infineon Technologies AG	MOSFET N-CH 20V 1.5A SOT-363 Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
BSD214SNL6327 DISTI # BSD214SNL6327	Infineon Technologies AG	Trans MOSFET N-CH 20V 1.5A 6-Pin SOT-363 T/R - Bulk (Alt: BSD214SNL6327) RoHS: Not Compliant Min Qty: 6250 Container: Bulk	Americas - 0	62500:$0.0508 31250:$0.0517 18750:$0.0536 12500:$0.0556 6250:$0.0576
BSD214SNL6327	Infineon Technologies AG	Small Signal Field-Effect Transistor, 1.5A I(D), 20V, N-Channel, MOSFET RoHS: Compliant	47600	500:$0.0500 1000:$0.0500 1:$0.0600 25:$0.0600 100:$0.0600

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	Mfr.#: BSD214SN L6327 OMO.#: OMO-BSD214SN-L6327-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET N-Ch 20V 1.5A SOT-363-6