TGF2965-SM

TGF2965-SM
Mfr. #:
TGF2965-SM
製造商:
Qorvo
描述:
RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
生命週期:
製造商新產品
數據表:
TGF2965-SM 數據表
交貨:
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ECAD Model:
更多信息:
TGF2965-SM 更多信息
產品屬性
屬性值
製造商
TriQuint (Qorvo)
產品分類
晶體管 - FET、MOSFET - 單
打包
托盤
部分別名
1123170
單位重量
0.002014 oz
安裝方式
貼片/貼片
包裝盒
QFN-16
技術
氮化鎵碳化矽
配置
單身的
晶體管型
HEMT
獲得
18 dB
輸出功率
6 W
鈀功耗
7.5 W
最高工作溫度
-
最低工作溫度
-
工作頻率
30 MHz to 3 GHz
Id 連續漏極電流
600 mA
Vds-漏-源-擊穿電壓
32 V
VGS-th-Gate-Source-Threshold-Voltage
-
Rds-On-Drain-Source-Resistance
-
晶體管極性
P-通道
正向跨導最小值
-
VGS-柵極-源極擊穿電壓
- 2.7 V
柵源截止電壓
-
最大漏柵電壓
-
Tags
TGF296, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 0.03 to 3 GHz, 5 W, 18 dB, 32 V, GaN, Plastic QFN
TGF2965-SM GaN RF Input-Matched Transistor
QorvoTGF2965-SM GaN RF Input-Matched Transistor is a 6W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0GHz. The integrated input matching network enables wideband gain and power performance. The output can be matched on board to optimize power and efficiency for any region within the band.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型號 製造商 描述 庫存 價格
TGF2965-SM
DISTI # 772-TGF2965-SM
QorvoRF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
RoHS: Compliant
0
  • 1:$45.0000
  • 25:$40.0000
  • 100:$35.0000
  • 250:$32.0000
TGF2965-SM-EVB
DISTI # 772-TGF2965-SM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
圖片 型號 描述
TGF2965-SM

Mfr.#: TGF2965-SM

OMO.#: OMO-TGF2965-SM

RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
TGF2953

Mfr.#: TGF2953

OMO.#: OMO-TGF2953

RF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm
TGF2954

Mfr.#: TGF2954

OMO.#: OMO-TGF2954

RF JFET Transistors DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
TGF2929-HM

Mfr.#: TGF2929-HM

OMO.#: OMO-TGF2929-HM-318

RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
TGF2956

Mfr.#: TGF2956

OMO.#: OMO-TGF2956-318

RF JFET Transistors DC-12GHz 55W 32V GaN P3dB @ 3GHz 47.6dBm
TGF2954

Mfr.#: TGF2954

OMO.#: OMO-TGF2954-318

RF JFET Transistors DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
TGF2977-SM-EVB

Mfr.#: TGF2977-SM-EVB

OMO.#: OMO-TGF2977-SM-EVB-1152

RF Development Tools
TGF2979-SM-EVB

Mfr.#: TGF2979-SM-EVB

OMO.#: OMO-TGF2979-SM-EVB-1152

RF Development Tools
TGF2929-HM-EVB

Mfr.#: TGF2929-HM-EVB

OMO.#: OMO-TGF2929-HM-EVB-1152

RF Development Tools
TGF2965-SM-EVB

Mfr.#: TGF2965-SM-EVB

OMO.#: OMO-TGF2965-SM-EVB-1152

RF Development Tools
可用性
庫存:
Available
訂購:
4000
輸入數量:
TGF2965-SM的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$48.00
US$48.00
10
US$45.60
US$456.00
100
US$43.20
US$4 320.00
500
US$40.80
US$20 400.00
1000
US$38.40
US$38 400.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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